The present invention provides a method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD). The method comprises: placing a silicon substrate in a reaction chamber; arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature; arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature; arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval; and growing a multi-layered InGaP layer on the second GaP layer.

The present invention provides a method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD). The method comprises: placing a silicon substrate in a reaction chamber; arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature; arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature; arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval; and growing a multi-layered InGaP layer on the second GaP layer.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A Hydride Vapor Phase Epitaxy (HVPE) system is provided which comprises a deposition assembly comprising a plurality of deposition chambers and a plurality of separation chambers mounted together, each separation chamber having two opposing ends, each end mounted to a deposition chamber of the plurality of deposition chambers and in fluid communication with the deposition chamber via a fluid pathway, wherein each deposition chamber of the plurality of deposition chambers defines a deposition zone having a height h.sub.d, each separation chamber defines a separation zone having a height h.sub.s and a length l.sub.s, and each fluid pathway has a height h.sub.fp, wherein h.sub.fp, h.sub.s and l.sub.s are selected to provide a predetermined interfacial transition region value between different material layers of a multilayer heterostructure; and a moveable belt configured to continuously convey a substrate mounted thereon through the plurality of deposition chambers and the plurality of separation chambers. The system further comprises a gas delivery assembly configured to deliver reactant gas mixtures to the deposition assembly for deposition on the substrate via HVPE.

A Hydride Vapor Phase Epitaxy (HVPE) system is provided which comprises a deposition assembly comprising a plurality of deposition chambers and a plurality of separation chambers mounted together, each separation chamber having two opposing ends, each end mounted to a deposition chamber of the plurality of deposition chambers and in fluid communication with the deposition chamber via a fluid pathway, wherein each deposition chamber of the plurality of deposition chambers defines a deposition zone having a height h.sub.d, each separation chamber defines a separation zone having a height h.sub.s and a length l.sub.s, and each fluid pathway has a height h.sub.fp, wherein h.sub.fp, h.sub.s and l.sub.s are selected to provide a predetermined interfacial transition region value between different material layers of a multilayer heterostructure; and a moveable belt configured to continuously convey a substrate mounted thereon through the plurality of deposition chambers and the plurality of separation chambers. The system further comprises a gas delivery assembly configured to deliver reactant gas mixtures to the deposition assembly for deposition on the substrate via HVPE.

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least ?/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.

A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least ?/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Device and method for immersed synthesis and continuous growth of phosphides under a magnetic field are disclosed in the field of semiconductor material preparation. In particular, device and method for synthesizing and growing semiconductor phosphides by means of immersing phosphorus into a metal melt under the action of a static magnetic field are disclosed. The device includes a furnace body, an injection synthesis system and a static magnetic field generator. The method includes A, heating the crucible to melt the metal and a covering material boron oxide in the crucible; B, immersing red phosphorus into the crucible; C, applying a static magnetic field surrounding the crucible, and adjusting the temperature gradient to start the synthesis; and D, performing crystal growth after completion of the synthesis. With the method provided by the present invention, the red phosphorus sinks into the melt in the form of a solid and floats upward from the bottom of the crucible after gasification, solving problems such as sucking-back generated by use of phosphorus bubbles; the transverse static magnetic field suppresses the bubble up-floating rate while suppressing the melt convection in the direction of the temperature gradient, so that the synthesis process is smoother and more rapid.