Patent classifications
C01B3/0042
NEW CLASS OF TUNABLE GAS STORAGE AND SENSOR MATERIALS
The electronic structure of nanowires, nanotubes and thin films deposited on a substrate is varied by doping with electrons or holes. The electronic structure can then be tuned by varying the support material or by applying a gate voltage. The electronic structure can be controlled to absorb a gas, store a gas, or release a gas, such as hydrogen, oxygen, ammonia, carbon dioxide, and the like.
Class of tunable gas storage and sensor materials
The electronic structure of nanowires, nanotubes and thin films deposited on a substrate is varied by doping with electrons or holes. The electronic structure can then be tuned by varying the support material or by applying a gate voltage. The electronic structure can be controlled to absorb a gas, store a gas, or release a gas, such as hydrogen, oxygen, ammonia, carbon dioxide, and the like.
METHOD FOR PRODUCING POROUS MAGNESIUM, POROUS MAGNESIUM PRODUCED THEREBY, AND HYDROGEN STORAGE MATERIAL COMPRISING HYDROGEN SUPPORTED BY POROUS MAGNESIUM
Provided are a method for producing porous magnesium having a simple solution process of adding a magnesium precursor to a reductant solution and reacting, porous magnesium produced by the method, and hydrogen storage material containing hydrogen supported in the porous magnesium.