The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.

Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.

Atomically thin layers including pores, their method of manufacture, and their use are disclosed. In some embodiments, pores may be formed in an atomically thin layer by growing the atomically thin layer on exposed portions of a substrate that includes islands comprising a material that is different than the material of the substrate. In some embodiments, pores and/or defects may be formed in an atomically thin layer by employing growth conditions that promote the formation of defects and/or pores. In certain embodiments, pores and/or defects may be etched to enlarge their size.

The present invention provides a two-dimensional material nanosheets with a large area and a controllable thickness and a general preparation method therefor. As an intralayer heat transfer coefficient of a two-dimensional material is much higher than an interlayer heat transfer coefficient thereof, the two-dimensional material is uniformly heated and sublimated layer by layer by controlling the energy of the laser pulses, a thinning thickness is controlled by adjusting the action time of the laser pulses, and finally, a two-dimensional material film with a controllable thickness is obtained. At the same time, a sample displacement stage moving freely in a two-dimensional plane space can realize preparation of the two-dimensional material film with a large area. Compared with traditional methods, the present invention can control a sample thickness of the two-dimensional material film, has a high generality, and is suitable for all kinds two-dimensional materials.

The present invention provides a two-dimensional material nanosheets with a large area and a controllable thickness and a general preparation method therefor. As an intralayer heat transfer coefficient of a two-dimensional material is much higher than an interlayer heat transfer coefficient thereof, the two-dimensional material is uniformly heated and sublimated layer by layer by controlling the energy of the laser pulses, a thinning thickness is controlled by adjusting the action time of the laser pulses, and finally, a two-dimensional material film with a controllable thickness is obtained. At the same time, a sample displacement stage moving freely in a two-dimensional plane space can realize preparation of the two-dimensional material film with a large area. Compared with traditional methods, the present invention can control a sample thickness of the two-dimensional material film, has a high generality, and is suitable for all kinds two-dimensional materials.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

The present disclosure relates to production of electrodes. The present disclosure particularly relates to production of graphene based transparent conducting electrode (TCE). The disclosure provides a simple and environmental friendly process for producing said graphene based TCE by coating of graphene on a modified or non-modified substrate. Said electrode provides large area metal network with reduced non-uniformity of conducting film, visible transparency and low or reduced sheet resistance. The disclosure further relates to a graphene based transparent conductive electrode (TCE).

The present disclosure relates to production of electrodes. The present disclosure particularly relates to production of graphene based transparent conducting electrode (TCE). The disclosure provides a simple and environmental friendly process for producing said graphene based TCE by coating of graphene on a modified or non-modified substrate. Said electrode provides large area metal network with reduced non-uniformity of conducting film, visible transparency and low or reduced sheet resistance. The disclosure further relates to a graphene based transparent conductive electrode (TCE).

A method of forming a fiber includes providing a sheet of a single layer of graphene or an oxidative analogue of graphene and applying force to the sheet to induce bending in the sheet and increase an aspect ratio thereof, thereby forming the fiber.