Patent classifications
C01B32/188
Manufacturing method of micro-nano structure antireflective coating layer and display apparatus thereof
A manufacturing method of micro-nano structure antireflective coating layer and a display apparatus thereof are described. The method includes providing a substrate, forming a silicon oxide layer on the substrate, forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer, and forming a bottom surface of the antireflective coating layer in the nucleation points by serving the graphene layer as a growing base layer, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer.
Manufacturing method of micro-nano structure antireflective coating layer and display apparatus thereof
A manufacturing method of micro-nano structure antireflective coating layer and a display apparatus thereof are described. The method includes providing a substrate, forming a silicon oxide layer on the substrate, forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer, and forming a bottom surface of the antireflective coating layer in the nucleation points by serving the graphene layer as a growing base layer, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer.
Method of manufacturing graphene using metal catalyst
The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.
Method of manufacturing graphene using metal catalyst
The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.
PRODUCTION OF GRAPHENE MATERIALS DIRECTLY FROM CARBON/GRAPHITE PRECURSOR
Provided is a method of producing isolated graphene sheets directly from a carbon/graphite precursor. The method comprises: (a) providing a mass of aromatic molecules wherein the aromatic molecules are selected from petroleum heavy oil or pitch, coal tar pitch, a polynuclear hydrocarbon, or a combination thereof; (b) heat treating this mass and using chemical or mechanical means to form graphene domains dispersed in a disordered matrix of carbon or hydrocarbon molecules, wherein the graphene domains are each composed of from 1 to 30 planes of hexagonal carbon atoms or fused aromatic rings having a length or width from 5 nm to 20 m and an inter-graphene space between two planes of hexagonal carbon atoms or fused aromatic rings no less than 0.4 nm; and (c) separating and isolating the planes of hexagonal carbon atoms or fused aromatic rings to recover graphene sheets from the disordered matrix.
PRODUCTION OF GRAPHENE MATERIALS DIRECTLY FROM CARBON/GRAPHITE PRECURSOR
Provided is a method of producing isolated graphene sheets directly from a carbon/graphite precursor. The method comprises: (a) providing a mass of aromatic molecules wherein the aromatic molecules are selected from petroleum heavy oil or pitch, coal tar pitch, a polynuclear hydrocarbon, or a combination thereof; (b) heat treating this mass and using chemical or mechanical means to form graphene domains dispersed in a disordered matrix of carbon or hydrocarbon molecules, wherein the graphene domains are each composed of from 1 to 30 planes of hexagonal carbon atoms or fused aromatic rings having a length or width from 5 nm to 20 m and an inter-graphene space between two planes of hexagonal carbon atoms or fused aromatic rings no less than 0.4 nm; and (c) separating and isolating the planes of hexagonal carbon atoms or fused aromatic rings to recover graphene sheets from the disordered matrix.
Formation of Interlayer Covalent Bonds in Bilayer, Trilayer and Multilayer Graphene
An embodiment according to the invention provides methods for making interlayer covalent bonds in bilayer, trilayer, and multilayer graphene. Raman spectroscopy is used to characterize the resulting material, and the Raman peak at approximately 1330 cm.sup.1 coincides with the characteristic peak of diamond and polycrystalline nanodiamond peaks published in the art. This indicates that the process induces the formation of sp.sup.3 carbon-carbon (CC) bonds (similar to the ones in diamond) between the graphene layers. The graphene bilayer or multilayer converts to sp.sup.3 bonded carbon only partially, as the Raman spectrum also indicates a strong component of graphene still remaining in the bilayer or multilayer.
Formation of Interlayer Covalent Bonds in Bilayer, Trilayer and Multilayer Graphene
An embodiment according to the invention provides methods for making interlayer covalent bonds in bilayer, trilayer, and multilayer graphene. Raman spectroscopy is used to characterize the resulting material, and the Raman peak at approximately 1330 cm.sup.1 coincides with the characteristic peak of diamond and polycrystalline nanodiamond peaks published in the art. This indicates that the process induces the formation of sp.sup.3 carbon-carbon (CC) bonds (similar to the ones in diamond) between the graphene layers. The graphene bilayer or multilayer converts to sp.sup.3 bonded carbon only partially, as the Raman spectrum also indicates a strong component of graphene still remaining in the bilayer or multilayer.
Synthesis and processing of pure and NV nanodiamonds and other nanostructures
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.
Synthesis and processing of pure and NV nanodiamonds and other nanostructures
Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.