C01B32/963

PROCESS FOR PRODUCING SINTERED SILICON CARBIDE BODIES
20230322631 · 2023-10-12 ·

A process for preparing a sintered silicon carbide body including sintering a sample including silicon carbide particles to form a shaped sintered silicon carbide body, the particles containing a silicon carbide core and a surface layer containing carbon and oxygen, the sample having at least 90 weight % being C or Si and having a carbon to silicon molar ratio molC/molSi higher than 1 and a carbon in excess to oxygen molar ratio Cex/molO which is higher than 0.5 and lower than 5.3.

MANUFACTURING OF SILICON-CARBON COMPOSITES MATERIALS

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

MANUFACTURING OF SILICON-CARBON COMPOSITES MATERIALS

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

Silicon carbon composites comprising ultra low z

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Silicon carbon composites comprising ultra low z

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

METHOD OF MAKING COMPOSITE ARTICLES FROM SILICON CARBIDE

A method of forming a composite article may generally comprise forming a mixture of (i) a reactant gas stream comprising hydrogen and methyltrichlorosilane and (ii) solid silicon carbide particles; heating a carbon substrate in the reactor; heating the mixture of the reactant gas stream and solid silicon carbide particles to decompose the methyltrichlorosilane to produce silicon carbide material without causing the solid silicon carbide particles to react and injecting the heated mixture into the reactor; co-depositing the silicon carbide material and the solid silicon carbide particles onto the heated carbon substrate in the reactor to produce a CVD matrix comprising the silicon carbide material and the solid silicon carbide particles by chemical vapor deposition on the heated carbon substrate; post-treating the carbon substrate having the CVD matrix coating in a furnace; and cooling and removing the carbon substrate from the CVD matrix to form the transparent composite article.

SILICON CARBON COMPOSITES COMPRISING ULTRA LOW Z

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

SILICON CARBON COMPOSITES COMPRISING ULTRA LOW Z

Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.