A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty air, donut-shaped plasma into which particulate matter can be introduced. The plasma in the first two stages is formed by gases from the chemical reactions and in the third from inert gasses. Cyclone separators are used to extract particulates from the plasma in an inert gas that prevents reverse reactions as the particular cools.

A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty air, donut-shaped plasma into which particulate matter can be introduced. The plasma in the first two stages is formed by gases from the chemical reactions and in the third from inert gasses. Cyclone separators are used to extract particulates from the plasma in an inert gas that prevents reverse reactions as the particular cools.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

Technical-grade silicon is produced by reacting a raw material mixture containing silicon dioxide and carbon in an electric furnace with a particulate mediator containing at least one of the elements C, O, Al and Si is reacted in an electric furnace, wherein the mixture is described by a dimensionless index K, K having a value of from 0 to 745 and being calculated as follows:

[00001]$\begin{array}{cc}K={\omega }_M.Math.{\beta }_{RM}.Math.{\mu }_C\mathrm{where}\text{:}& \mathrm{equation}\left(1\right)\\ {\omega }_M=\frac{6.Math.\left(1-{\mathrm{.Math.}}_{m,M}\right)}{d_{50,M}}& \mathrm{equation}\left(2\right)\\ {\beta }_{RM}=d_{90,RM}-d_{10,RM}& \mathrm{equation}\left(3\right)\\ {\mu }_C=\frac{3}{2}-\frac{m_M}{m_{RM}}& \mathrm{equation}\left(4\right)\end{array}$

Technical-grade silicon is produced by reacting a raw material mixture containing silicon dioxide and carbon in an electric furnace with a particulate mediator containing at least one of the elements C, O, Al and Si is reacted in an electric furnace, wherein the mixture is described by a dimensionless index K, K having a value of from 0 to 745 and being calculated as follows:

[00001]$\begin{array}{cc}K={\omega }_M.Math.{\beta }_{RM}.Math.{\mu }_C\mathrm{where}\text{:}& \mathrm{equation}\left(1\right)\\ {\omega }_M=\frac{6.Math.\left(1-{\mathrm{.Math.}}_{m,M}\right)}{d_{50,M}}& \mathrm{equation}\left(2\right)\\ {\beta }_{RM}=d_{90,RM}-d_{10,RM}& \mathrm{equation}\left(3\right)\\ {\mu }_C=\frac{3}{2}-\frac{m_M}{m_{RM}}& \mathrm{equation}\left(4\right)\end{array}$

A carbon negative clean fuel production system includes: a main platform; a heat collection device for capturing heat from a hydrothermal emissions from a hydrothermal vent on a floor of an ocean; a heat-driven electric generator; a heat distribution system including a heat absorbing material and a heat transporting pipe; anchor platforms tethered to the main platform; a mineral separator; a seawater filtration unit; a water splitting device; a sand refinery machine; a carbon removal system; and a chemical production system for producing hydrides, halides and silane. Also disclosed is a method for carbon negative clean fuel production, including: capturing heat; producing electric energy; separating minerals; filtering seawater; splitting water; refining sand; removing carbon dioxide; and producing hydrides, halides, and silane.

Silicon carbon composite materials, preparation methods and applications of the silicon carbon composite material are provided. The silicon carbon composite material includes a core and a carbon coating layer. At least one part of a surface of the core is covered by the carbon coating layer. The core includes a carbon matrix and SiO.sub.x particles, the carbon matrix is continuously distributed and includes N channels in communication with outside, and the SiO.sub.x particles are filled in the channels. A size of the SiO.sub.x particle is 0.1 nm to 0.9 nm, 0.9≤x≤1.7, and N≥1 and is an integer.

Silicon carbon composite materials, preparation methods and applications of the silicon carbon composite material are provided. The silicon carbon composite material includes a core and a carbon coating layer. At least one part of a surface of the core is covered by the carbon coating layer. The core includes a carbon matrix and SiO.sub.x particles, the carbon matrix is continuously distributed and includes N channels in communication with outside, and the SiO.sub.x particles are filled in the channels. A size of the SiO.sub.x particle is 0.1 nm to 0.9 nm, 0.9≤x≤1.7, and N≥1 and is an integer.

A carbon negative clean fuel production system includes: a main platform; a heat collection device for capturing heat from a hydrothermal emissions from a hydrothermal vent on a floor of an ocean; a heat-driven electric generator; a heat distribution system including a heat absorbing material and a heat transporting pipe; anchor platforms tethered to the main platform; a mineral separator; a seawater filtration unit; a water splitting device; a sand refinery machine; a carbon removal system; and a chemical production system for producing hydrides, halides and silane. Also disclosed is a method for carbon negative clean fuel production, including: capturing heat; producing electric energy; separating minerals; filtering seawater; splitting water; refining sand; removing carbon dioxide; and producing hydrides, halides, and silane.