An apparatus for manufacturing a polysilicon rod comprising: a core wire 1 on which polysilicon is deposited; a core wire electrode 60 provided to penetrate a bottom plate 80; an adjustment member 10 provided between the silicon core wire 1 and the core wire electrode 60, and movable with respect to the bottom plate 80; and a cooling part capable of cooling the adjustment member 10.

A method for producing a polycrystalline silicon rod includes: while energizing a core wire formed of silicon, supplying a polycrystalline silicon deposition raw material gas into a reactor so as to perform gas phase growth of polycrystalline silicon on a surface of the core wire, in which during a period from a completion of cleaning of the surface of the above core wire to an installation of the core wire in the reactor, the silicon core wire is placed in an atmosphere adjusted to a cleanliness of Class 4 to Class 6 as defined in ISO 14644-1. With this method, it is possible to obtain a polycrystalline silicon rod which has a total metal concentration of iron and nickel of 40 pptw or less in terms of elements in a region within 2 mm from an interface between the core wire and polycrystalline silicon deposited on the surface of the core wire.

A method for producing a polycrystalline silicon rod includes: while energizing a core wire formed of silicon, supplying a polycrystalline silicon deposition raw material gas into a reactor so as to perform gas phase growth of polycrystalline silicon on a surface of the core wire, in which during a period from a completion of cleaning of the surface of the above core wire to an installation of the core wire in the reactor, the silicon core wire is placed in an atmosphere adjusted to a cleanliness of Class 4 to Class 6 as defined in ISO 14644-1. With this method, it is possible to obtain a polycrystalline silicon rod which has a total metal concentration of iron and nickel of 40 pptw or less in terms of elements in a region within 2 mm from an interface between the core wire and polycrystalline silicon deposited on the surface of the core wire.

A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.

A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be non-conductive with respect to a screwing part formed in the metal electrode. A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrode adapter may be non-conductive with respect to the fixing mechanism part.

A rod-shaped body (10) is used to lift a cover (103) so as to detach the cover from a bottom plate (101), together with which the cover (103) forms a reactor (100). The rod-shaped body (10) includes a first part (11) to be inserted into a bottom plate-side hole (102a) provided in a surrounding area of the bottom plate (101) and a second part (12) to be inserted into a cover-side hole (104a) disposed in a surrounding area of the cover (103) so as to face the bottom plate-side hole (102a).

A rod-shaped body (10) is used to lift a cover (103) so as to detach the cover from a bottom plate (101), together with which the cover (103) forms a reactor (100). The rod-shaped body (10) includes a first part (11) to be inserted into a bottom plate-side hole (102a) provided in a surrounding area of the bottom plate (101) and a second part (12) to be inserted into a cover-side hole (104a) disposed in a surrounding area of the cover (103) so as to face the bottom plate-side hole (102a).

It is possible to carry out an operation to open a reactor while checking a falling over status of a silicon rod. A protective structure (200) includes: a first frame body (201) that is shaped so as to surround a bottom plate (101) of a reactor (100) in which a silicon rod (110) is contained; and a protective wall surface (204) that extends vertically upward from the first frame body (201) and that forms an storage space (210) for the silicon rod (110). The protective wall surface (204) has a mesh structure.

It is possible to carry out an operation to open a reactor while checking a falling over status of a silicon rod. A protective structure (200) includes: a first frame body (201) that is shaped so as to surround a bottom plate (101) of a reactor (100) in which a silicon rod (110) is contained; and a protective wall surface (204) that extends vertically upward from the first frame body (201) and that forms an storage space (210) for the silicon rod (110). The protective wall surface (204) has a mesh structure.

Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.