A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ⅔ of a radius and that excludes a seed core, average grain boundary characteristics have following features: a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm.sup.2, and a random grain boundary length does not exceed 800 mm/mm.sup.2.

A polysilicon rod wherein in an area whose distance from a center of a cross section of the polysilicon rod is within ⅔ of a radius and that excludes a seed core, average grain boundary characteristics have following features: a coincidence grain boundary ratio exceeds 20%, a grain boundary length exceeds 550 mm/mm.sup.2, and a random grain boundary length does not exceed 800 mm/mm.sup.2.

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta]≤(Cd1+Cd2)−(Ca1+Ca2)≤8 [ppta].

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta]≤(Cd1+Cd2)−(Ca1+Ca2)≤8 [ppta].

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta].

A takeout jig (1) includes: a support part (20) which is configured to be pulled up to take out a silicon rod (10) and which is configured to support the silicon rod (10) by clamping one or more end portions (15) of the silicon rod (10); one or more first cords (30) which are equal in number to or greater in number than the silicon rod (10) and which are configured to pull up the support part (20); and one or more second cords (40) which are configured to hold the silicon rod (10) by wrapping around the silicon rod (10).

A takeout jig (1) includes: a support part (20) which is configured to be pulled up to take out a silicon rod (10) and which is configured to support the silicon rod (10) by clamping one or more end portions (15) of the silicon rod (10); one or more first cords (30) which are equal in number to or greater in number than the silicon rod (10) and which are configured to pull up the support part (20); and one or more second cords (40) which are configured to hold the silicon rod (10) by wrapping around the silicon rod (10).

In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis C.sub.R is shifted from a center axis C.sub.0 of a silicon core wire 20 by 2 mm or more, is manufactured.

In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis C.sub.R is shifted from a center axis C.sub.0 of a silicon core wire 20 by 2 mm or more, is manufactured.

A method for producing a polycrystalline silicon processed article includes removing a polycrystalline silicon rod, obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method, in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod. The polycrystalline silicon rod is detached from the electrode and the carbon member present on the end portion of the polycrystalline silicon rod is covered using a covering material until the processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state.