Disclosed here is a method for making a monolithic rare earth oxide (REO) aerogel, comprising: preparing a reaction mixture comprising at least one rare earth metal nitrate, at least one epoxide, at least one base catalyst, and at least one organic solvent; curing the mixture to produce a wet gel; drying the wet gel to produce a dry gel; and thermally annealing the dry gel to produce the monolithic REO aerogel. Also disclosed is an REO aerogel comprising a network of REO nanostructures, wherein the REO aerogel is a monolith having at least one lateral dimension of at least 1 cm, wherein the REO aerogel has a density of about 40-500 mg/cm.sup.3 and/or a BET surface area of at least about 20 m.sup.2/g, and wherein the REO aerogel is substantially free of oxychloride.

Disclosed here is a method for making a monolithic rare earth oxide (REO) aerogel, comprising: preparing a reaction mixture comprising at least one rare earth metal nitrate, at least one epoxide, at least one base catalyst, and at least one organic solvent; curing the mixture to produce a wet gel; drying the wet gel to produce a dry gel; and thermally annealing the dry gel to produce the monolithic REO aerogel. Also disclosed is an REO aerogel comprising a network of REO nanostructures, wherein the REO aerogel is a monolith having at least one lateral dimension of at least 1 cm, wherein the REO aerogel has a density of about 40-500 mg/cm.sup.3 and/or a BET surface area of at least about 20 m.sup.2/g, and wherein the REO aerogel is substantially free of oxychloride.

Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF.sub.3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WF.sub.x formation.

An oxygen storage material comprises three pyrochlore-type composite oxides which are a ceria-zirconia composite oxide, a lanthana-zirconia composite oxide, and a ceria-zirconia-lanthana composite oxide, and which coexist together, wherein the oxygen storage material contains: first secondary particles made of the pyrochlore-type ceria-zirconia composite oxide and the pyrochlore-type ceria-zirconia-lanthana composite oxide; and second secondary particles made of the pyrochlore-type lanthana-zirconia composite oxide and the pyrochlore-type ceria-zirconia-lanthana composite oxide.

Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to ethylene. Related methods for use and manufacture of the same are also disclosed.

The present invention relates to a porous formed article comprising an organic polymer resin and an inorganic ion adsorbent and having the most frequent pore size of 0.08 to 0.70 m measured with a mercury porosimeter.

The present invention also relates to a method for producing a porous formed article and a production apparatus for a porous formed article.

A gas sensor capable of detecting carbon dioxide and having high stability is provided. A carbon dioxide gas sensor comprising an insulating substrate 3 and a gas sensing layer 1 formed on one major surface of the insulating substrate 3 via electrodes 2, wherein the gas sensing layer 1 comprises: (a) one or more rare earth metal oxycarbonates represented by Ln.sub.2O.sub.2CO.sub.3, Ln being at least one rare earth metal element selected from Sc, Y, La, Ce, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Pr, Yb and Lu, the rare earth metal oxycarbonate containing a hexagonal rare earth metal oxycarbonate as a main component; or (b) monoclinic samarium dioxycarbonate,
a production method of the gas sensor, and a method of selectively producing crystal polymorphism of lanthanum dioxycarbonate represented by La.sub.2O.sub.2CO.sub.3 are provided.

An object of the present invention is to provide a cerium oxide abrasive material containing cerium oxide abrasive particles prepared by a synthetic method using an aqueous solution of a salt of a rare earth element and a precipitant, the cerium oxide abrasive particles having a spherical shape and high polishing performance (polishing rate and polishing precision of the polished surface), a method for producing the cerium oxide abrasive material, and a polishing method. The cerium oxide abrasive material according to the present invention comprises spherical cerium oxide abrasive particles prepared by a synthetic method using an aqueous solution of a salt of a rare earth element and a precipitant, wherein the cerium oxide abrasive particles have a spherical shape having an average aspect ratio within the range of 1.00 to 1.15.

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials.

A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.