A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.

Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.

Polishing slurries including ceria nanoparticles and methods of polishing materials using slurries including ceria nanoparticles. The slurries may include colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms. The methods of polishing materials may include continuously flowing a slurry over a surface of the material. The slurry may include deionized water, colloidal ceria nanoparticles having at least 20% surface concentration of Ce.sup.3+ oxidation state cerium atoms, where the colloidal ceria nanoparticles include a concentration having a range of 0.01 wt. % to 3.0 wt. %, and hydrogen peroxide including a concentration having a range of 0.015 wt. % to 1.5 wt. %. The method may also include chemically and mechanically removing a portion of the material. The removed portion may include the surface of the material exposed to the slurry.

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, a self-stopping agent, and a cationic polymer.

An object of the present invention is to provide an ultraviolet and/or near-infrared shielding agent composition for transparent material using silicon compound-coated silicon-doped zinc oxide particles that are controlled in properties in an ultraviolet region and/or a near-infrared region. The present invention provides an ultraviolet and/or near-infrared shielding agent composition for transparent material used for a purpose of shielding ultraviolet rays and/or near-infrared rays, the ultraviolet and/or near-infrared shielding agent composition for transparent material featuring that the ultraviolet and/or near-infrared shielding agent contains silicon compound-coated silicon-doped zinc oxide particles, with which surfaces of silicon-doped zinc oxide particles that are zinc oxide particles doped with at least silicon are at least partially coated with a silicon compound.

A polishing composition comprising an abrasive grain; a modified microfibril cellulose in which at least a part of the cellulose units has a hydroxyl group at the C6 position oxidized to a carboxyl group; and a dispersion medium, wherein each content of Na and K is 100 ppm or less relative to the solids weight.

A polishing composition comprising an abrasive grain; a modified microfibril cellulose in which at least a part of the cellulose units has a hydroxyl group at the C6 position oxidized to a carboxyl group; and a dispersion medium, wherein each content of Na and K is 100 ppm or less relative to the solids weight.