Provided is a method of producing a titanium oxide in which titanium tetrachloride is hydrolyzed using a liquid-phase method. This method includes a step of adding an aqueous titanium tetrachloride solution to warm water having a higher temperature than the aqueous titanium rachloride solution, in which in the step, the temperature of the warm water is 30° C. to 95° C. and the aqueous titanium tetrachloride solution is added to the warm water such that an increase rate of titanium atomic concentration in the warm water is 0.25 mmol/L/min to 5.0 mmol/L/min, and a titanium atomic concentration in the warm water after the step is 280 mmol/L or lower.

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Titanium dioxide particles have high UVB absorption properties, an effective UVA efficacy and transparency. The titanium dioxide can be produced by calcining precursor titanium dioxide particles. The titanium dioxide particles can be used to form dispersions. The titanium dioxide particles and dispersions thereof can be used to produce sunscreen products which are suitable for use in a wide range of personal care applications.

Titanium dioxide particles have high UVB absorption properties, an effective UVA efficacy and improved transparency. The titanium dioxide can be produced by calcining precursor titanium dioxide particles. The titanium dioxide particles can be used to form dispersions. The titanium dioxide particles and dispersions thereof can be used to produce sunscreen products which are suitable for use in a wide range of personal care applications.

Provided are the following: a mixture of visible light-responsive photocatalytic titanium oxide fine particles which can conveniently produce a photocatalyst thin film that exhibits photocatalyst activity even with only visible light (400-800 nm) and that exhibits high transparency; a dispersion liquid of the fine particles; a method for producing the dispersion liquid; a photocatalyst thin film; and a member having the photocatalyst thin film on a surface thereof. The mixture of visible light-responsive photocatalytic titanium oxide fine particles is characterized by containing two kinds of titanium dioxide fine particles: first titanium oxide fine particles, in which a tin component and a transition metal component (excluding an iron group element component) that increases visible light response properties form a solid solution, and second titanium oxide fine particles, in which an iron group element component and a chromium group element component form a solid solution.

The present invention manufactures titanium oxide particles that have a small degree of aggregation (size of aggregate particle diameter relative to primary particle diameter) and are not readily sintered by heating. The present invention has: a step in which an alkali and a solution including a carboxylic acid and a titanium (oxy)chloride are mixed, and the titanium (oxy)chloride is hydrolyzed by neutralization; and a step in which, after the hydrolysis by neutralization, the solution is heated to a temperature of 80 C. or more and 110 C. or less, and the titanium (oxy)chloride remaining in the solution is hydrolyzed by heating. It is thus possible to obtain titanium oxide particles that have a small degree of aggregation and a range of 1-35 for the ratio (D90/BET diameter) between the 90% cumulative mass particle size distribution diameter (D90) (nm) as measured by a dynamic light-scattering particle diameter distribution measurement device and the BET diameter (nm) as calculated from the specific surface area of the titanium oxide particles.

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

The invention provides a method for producing titanium hydroxide comprising: a step A of obtaining titanium hydroxide having a BET specific surface area of 300 m.sup.2/g or more and a crystallite diameter of 20 or more by simultaneously neutralizing an aqueous solution of titanium halide and an alkaline substance under the conditions of pH in the range of 4.8 to 5.2 and a temperature in the range of 40 to 55 C.; and a step C of washing the titanium hydroxide with water, dispersing the titanium hydroxide in water to obtain a slurry containing the titanium hydroxide, adding to the slurry (a) a phosphorus compound in an amount of 1.0 to 5.0% by weight or a silicon compound in an amount of 2.0 to 5.0% by weight, or (b) a phosphorus compound and a silicon compound in an amount of 1.0 to 5.0% by weight in total, wherein each of the amounts is relative to the weight of the titanium hydroxide in terms of titanium oxide (TiO.sub.2), and washing the resulting slurry with water, and drying the slurry.

Titanium oxide particles of the present invention include octahedral-shaped particles, in which each particle of the octahedral-shaped particles has line segments each of which connects two apexes which face each other and has a maximum value of the line segments, an average value of the maximum values is 300 nm or more and 1,000 nm or less, and a value (the average value of the maximum values/BET-converted average particle diameter) obtained by dividing the average value of the maximum values of the line segments by an average particle diameter converted from a BET specific surface area is 1.0 or more and 2.5 or less.