Patent classifications
C03C17/3636
REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 m1 m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 m.sup.1 is not more than 17 nm.sup.4.
COATED ARTICLE WITH LOW-E COATING HAVING LOW VISIBLE TRANSMISSION WHICH MAY BE USED IN IG WINDOW UNIT FOR GREY APPEARANCE
This invention relates to a coated article including a low-emissivity low-E) coating. In certain example embodiments, the low-E coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (IR) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., NiCr based layers) and a dielectric layer of or including a material such as silicon nitride. In certain example embodiments, the coated article has a low visible transmission (e.g., no greater than 60%, more preferably no greater than about 55%, and most preferably no greater than about 0%).
Transparent pane with electrically conductive coating
A transparent pane having at least one transparent substrate and at least one an electrically conductive coating on at least one surface of the transparent substrate. The electrically conductive coating has at least two functional layers arranged one on top of another. Each functional layer contains: a layer of optically highly refractive material; a smoothing layer above the layer of optically highly refractive material; a lower adapting (matching) layer above the smoothing layer; an electrically conductive layer above the lower adapting layer; and an upper adapting (matching) layer above the electrically conductive layer. The lower adapting layer and/or the upper adapting layer contain a homogeneously distributed getter material. At least one lower adapting layer and/or upper adapting layer containing the getter material is in direct contact with the electrically conductive layer.
Low-Emissivity Coating for a Glass Substrate
The present invention relates to a glass substrate provided with a stack of thin coating layers formed by a first layer of anti-reflective dielectric material, with a refractive index of 1.65 to 2.65, located above the glass substrate. At least one structure of two layers formed by a first layer of an anti-reflective transparent dielectric material with a refractive index of 1.32 to 1.55, located in the bottom position, and a second layer of a metal functional layer with reflective properties in the infrared range, located in the top position, said structure being located above the first layer of anti-reflective dielectric material. A second layer of absorbent material forming an anti-corrosion barrier for protecting the metal functional layer against oxidation and corrosion. A third layer of an anti-reflective material, said layer being selected from a metal oxide with a refractive index of 1.32 to 1.55, a metal oxide with a refractive index of 1.65 to 1.95 or an aluminum-doped zinc oxide (AZO); and a fourth protective layer made of an anti-reflective material, for increasing the transmission of visible light and the scratch resistance of the substrate, having high transmission of visible light (60%), a solar transmission of less than 60%, a resistance of less than 10 per square and an emissivity of less than 0.10.
Reflective mask blank, reflective mask and method of manufacturing semiconductor device
An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 m1 m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 m.sup.1 is not more than 17 nm.sup.4.
COATED ARTICLE WITH LOW-E COATING HAVING LOW VISIBLE TRANSMISSION
This invention relates to a coated article including a low-emissivity (low-E) coating. In certain example embodiments, the low-E coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (IR) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., NiCr based layers) and a dielectric layer of or including a material such as silicon nitride. In certain example embodiments, the coated article has a low visible transmission (e.g., no greater than 60%, more preferably no greater than about 55%, and most preferably no greater than about 50%).
Coated article with low-E coating having low visible transmission which may be used in IG window unit for grey appearance
This invention relates to a coated article including a low-emissivity (low-E) coating. In certain example embodiments, the low-E coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (IR) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., NiCr based layers) and a dielectric layer of or including a material such as silicon nitride. In certain example embodiments, the coated article has a low visible transmission (e.g., no greater than 60%, more preferably no greater than about 55%, and most preferably no greater than about 50%).
CHEMICAL REACTION DEVICE, AND METHOD FOR PRODUCING SAME
Provided are a chemical reaction device able to promote a chemical reaction, and a method for producing same. The chemical reaction device has an optical electric field confinement/chemical reaction container structure obtained by integrating an optical electric field confinement structure for forming an optical mode having a frequency identical to or close to a vibrational mode of a chemical substance involved in a chemical reaction, and a chemical reaction container structure having a space for storing a fluid required for the chemical reaction and containing the chemical reaction, the optical mode and the vibrational mode being vibrationally coupled to promote the chemical reaction.
Coated article with low-E coating having low visible transmission
This invention relates to a coated article including a low-emissivity (low-E) coating. In certain example embodiments, the low-E coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (IR) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., NiCr based layers) and a dielectric layer of or including a material such as silicon nitride. In certain example embodiments, the coated article has a low visible transmission (e.g., no greater than 60%, more preferably no greater than about 55%, and most preferably no greater than about 50%).
Vacuum insulating glass (VIG) unit with pump-out port sealed using metal solder seal, and/or method of making the same
Certain example embodiments relate to vacuum insulating glass units having pump-out hole seals formed in connection with solder alloys that, when reactively reflowed, wet pre-coated metallic coatings, and/or associated methods. The alloys may be based on materials that form seals at temperatures that will not de-temper glass and/or decompose a laminate, and/or remain hermetic and lack porous structures in their bulks. SAC, InAg, and/or other preform materials may be used in different example embodiments.