Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:-first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and -second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.

The present disclosure relates to a decoration element comprising a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film provided on a surface opposite to the surface facing the light absorbing layer of the light reflective layer, between the light reflective layer and the light absorbing layer, or on a surface opposite to the surface facing the light reflective layer of the light absorbing layer.

An electrochromic film and an electrochromic device including the electrochromic film are disclosed. The electrochromic film includes an electrochromic layer and a passivation layer on one side of the electrochromic layer. The coloration level of the electrochromic film is different from the coloration level of the passivation layer. The film may change optical properties as a result of electrochromism according to an electrochemical reaction. The electrochromic film and the electrochromic device have improved electrochromism, excellent durability, excellent color-switching speed, and stepwise control of optical properties.

Provided is a carrier-attached metal foil which can suppress the number of foreign matter particles on the surface of a metal layer to enhance circuit formability, and can keep stable releasability even after heating at a high temperature of 240° C. or higher (for example, 260° C.) for a long period of time. The carrier-attached metal foil includes a carrier, a release functional layer provided on the carrier, the release functional layer including a metal oxynitride, and a metal layer provided on the release functional layer.

Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.

Disclosed herein are coated articles which may include a substrate and an optical coating that includes one or more layers of deposited material. At least a portion of the optical coating may include a residual compressive stress of more than 100 MPa. The coated article may include a strain-to-failure of 0.4% or more as measured by a Ring-on-Ring Tensile Testing Procedure. The optical coating may include a maximum hardness of 8 GPa or more and an average photopic transmission of 50% or greater.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

A window has an ion exchange substrate with a top surface. To improve robustness, the top surface has a polycrystalline aluminum oxide film formed from a plurality of crystals. At least 95% of the plurality of crystals in the aluminum oxide film has a largest dimension of no greater than about 10 nanometers. In addition, both the ion exchange substrate and aluminum oxide film are transparent or translucent.

Embodiments of a scratch-resistant and optically transparent material comprising silicon, aluminum, nitrogen, and optionally oxygen are disclosed. In one or more embodiments, the material exhibits an extinction coefficient (k) at a wavelength of 400 nm of less than about 1×10.sup.−3, and an average transmittance of about 80% or greater, over an optical wavelength regime in the range from about 380 nm to about 780 nm, as measured through the material having a thickness of about 0.4 micrometer. In one or more embodiments, the material comprises an intrinsic maximum hardness of about 12 GPa or greater as measured on a major surface of the material having a thickness of about 400 by a Berkovich Indenter Hardness Test along an indentation depth of about 100 nm or greater, low compressive stress and low roughness (Ra). Articles and devices incorporating the material are also disclosed.

A laminate including a glass plate and a coating layer, wherein the coating layer includes one or more components selected from the group consisting of silicon nitride, titanium oxide, alumina, niobium oxide, zirconia, indium tin oxide, silicon oxide, magnesium fluoride, and calcium fluoride, wherein a ratio (dc/dg) of a thickness dc of the coating layer to a thickness dg of the glass plate is in a range of 0.05×10.sup.−3 to 1.2×10.sup.−3, and wherein a radius of curvature r1 of the laminate with negating of self-weight deflection is 10 m to 150 m.