Patent classifications
C04B35/053
Spinel-reinforced magnesium oxide-based foam ceramic filter and preparation method therefor
A spinel-reinforced magnesium oxide-based foam ceramic filter that is obtained by coating onto a polyurethane foam carrier a slurry of light calcined magnesium oxide-based ceramic comprising a nanometer lanthanum oxide sintering aid, and then drying and sintering. A method for preparing the foam ceramic filter comprising: 1) preparing a ceramic slurry having a solid content of 60%-70% by dosing 15%-25% by mass of a nanometer alumina sol, 0.8%-1.5% by mass of a rheological agent, and the balance magnesium oxide ceramic powder comprising a nanometer lanthanum oxide sintering aid, and then adding absolute ethanol and ball milling to mix until uniform; 2) soaking a polyurethane foam template into the ceramic slurry, squeezing by a roller press the polyurethane foam template to remove redundant slurry therein to make a biscuit, and then removing the ethanol solvent in a ventilation chamber at a temperature of 40° C.-50° C. to dry the biscuit; 3) putting the dried biscuit into a sintering furnace, elevating the temperature to 1350° C.-1550° C. and performing a high temperature sintering, cooling to the room temperature with the furnace to obtain the magnesium oxide-based ceramic foam filter.
Shaping method and shaping device
An object shaping method includes a step of forming a powder layer using first powder, a step of placing second powder having an average particle diameter smaller than an average particle diameter of the first powder at a part of a region of the powder layer, and a first heating step of heating the powder layer in which the second powder is placed. The average particle diameter is equal to or larger than 1 nm and equal to or smaller than 500 nm, and the first heating step performs heating the powder layer at a temperature at which particles contained in the second powder are sintered or melted.
A SOL-GEL MATERIAL, AND USE THEREOF
A thermophotovoltaic (TPV) system, comprises a substrate, an emitter material adhered to the substrate, and a thermophotovoltaic (TPV) cell. The emitter material is a typically a metal oxide doped nickel oxide sol-gel material, in which the metal is magnesium or zirconium, and in which the sol-gel material comprises 97-99 mol % metal oxide, and about 1-3 mol % nickel oxide dopant. Providing an emitter material as a sol-gel allows the material to be coated on to surfaces providing better adherence to the surface, and also provides excellent heat stability. A sol-gel material is also described.
Continuous Operation Method for Microwave High-Temperature Pyrolysis of Solid Material Comprising Organic Matter
A continuous operation method is employed for the microwave high-temperature pyrolysis of a solid material containing an organic matter. The method includes the steps of mixing a solid material containing an organic matter with a liquid organic medium; transferring the obtained mixture to a microwave field; and in the microwave field, continuously contacting the mixture with a strong wave absorption material in an inert atmosphere or in vacuum. The strong wave absorption material continuously generates a high temperature under a microwave such that the solid material containing an organic matter and the liquid organic medium are continuously pyrolyzed to implement a continuous operation.
MAGNESIUM OXIDE SPUTTERING TARGET
A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
SINTERED BODY
A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.
PLASMA CHAMBER TARGET FOR REDUCING DEFECTS IN WORKPIECE DURING DIELECTRIC SPUTTERING
Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.
A System and Method for the Production of High Strength Materials
The invention provides a process for manufacturing ceramics and refractories comprising the steps of producing a porous powder comprising nanograin sized particles wherein the particles have a Young’s modulus value that is smaller in value compared to the same crystalline material; compacting and processing the powder such that the powder forms a stable homogeneous composite; and sintering the composite for a time and temperature to lead to uniform shrinkage of the composite to make a dense homogenous material.
A System and Method for the Production of High Strength Materials
The invention provides a process for manufacturing ceramics and refractories comprising the steps of producing a porous powder comprising nanograin sized particles wherein the particles have a Young’s modulus value that is smaller in value compared to the same crystalline material; compacting and processing the powder such that the powder forms a stable homogeneous composite; and sintering the composite for a time and temperature to lead to uniform shrinkage of the composite to make a dense homogenous material.
Plasma Etching Apparatus Component for Manufacturing Semiconductor Comprising Composite Sintered Body and Manufacturing Method Therefor
Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y.sub.2O.sub.3) and 30 vol % to 70 vol % of magnesia (MgO) and having plasma resistance.
The plasma etching apparatus component for manufacturing a semiconductor provided in one aspect of the present invention has excellent corrosion resistance to plasma, and may have good corrosion resistance to plasma even when the composite sintered body is sintered at a relatively low relative density. In addition, the composite sintered body has a small crystal grain size and a small increase in surface roughness after etching, so that there is an effect that contaminant particles may be reduced. Furthermore, the plasma etching apparatus component for manufacturing a semiconductor has excellent strength compared to a typical plasma-resistant material, is inexpensive, and is excellent in terms of economic feasibility and utilization.