C04B35/475

DIELECTRIC FILM, DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD

A dielectric film, contains: (1) Bi and Ti; (2) at least one element E1 selected from the group consisting of Na and K; and (3) at least one element E2 selected from the group consisting of Ba, Sr, and Ca. The dielectric film has a main phase containing an oxide that contains Bi, Ti, the element E1, and the element E2 and has a perovskite structure, and a subphase that contains Bi and has an oxygen concentration lower than that of the main phase. In a sectional surface of the dielectric film, a ratio RS of an area of the subphase to a sum of an area of the main phase and the area of the subphase is greater than or equal to 0.03 and less than or equal to 0.3.

PIEZOELECTRIC CERAMIC AND METHOD FOR MANUFACTURING SAME, AS WELL AS PIEZOELECTRIC ELEMENT

A piezoelectric ceramic, which does not contain lead as a constituent element, is characterized in that: its primary component is a perovskite compound expressed by the composition formula (Bi.sub.0.5x/2Na.sub.0.5x/2Ba.sub.x)(Ti.sub.1yMn.sub.y)O.sub.3 (where 0.01x0.25, 0.001y0.020); and the coefficient of variation (CV) in grain size among the grains contained therein is 35 percent or lower. The piezoelectric ceramic presents an improved dielectric loss tangent tan .

Piezoeletric material, piezoelectric element, liquid discharge head, liquid discharge apparatus, vibration wave motor, optical instrument, vibration apparatus, dust removing apparatus, imaging apparatus and electronic device

A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4L.sub.5)/L.sub.50.05 and (L.sub.8L.sub.9)/L.sub.90.05 when the lengths of twelve BiO bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:
(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3(1)
wherein 0x0.2, 0y0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

Piezoeletric material, piezoelectric element, liquid discharge head, liquid discharge apparatus, vibration wave motor, optical instrument, vibration apparatus, dust removing apparatus, imaging apparatus and electronic device

A piezoelectric material including a perovskite-type metal oxide represented by the following general formula (1); Bi; and Mn, wherein the content of Bi is 0.1-0.5 mol % with respect to 1 mol of the metal oxide, the content of Mn is 0.3-1.5 mol % with respect to 1 mol of the metal oxide, and the piezoelectric material satisfies (L.sub.4L.sub.5)/L.sub.50.05 and (L.sub.8L.sub.9)/L.sub.90.05 when the lengths of twelve BiO bonds with Bi that is located at a 12-fold site with respect to O in a perovskite-type unit cell as a starting point are taken to be L.sub.1 to L.sub.12 in length order:
(Ba.sub.1-xM1.sub.x)(Ti.sub.1-yM2.sub.y)O.sub.3(1)
wherein 0x0.2, 0y0.1, and M1 and M2 are mutually different metal elements which have a total valence of +6 and are selected from other elements than Ba, Ti, Bi and Mn.

PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM DEVICE, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, PIEZOELECTRIC TRANSDUCER, HARD DISK DRIVE, PRINTER HEAD, AND INK JET PRINTER DEVICE
20200227621 · 2020-07-16 · ·

A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.

PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM DEVICE, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, PIEZOELECTRIC TRANSDUCER, HARD DISK DRIVE, PRINTER HEAD, AND INK JET PRINTER DEVICE
20200227621 · 2020-07-16 · ·

A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.

Ceramic

There is disclosed a piezoelectric ceramic having the composition: a[PbTiO.sub.3]-b[SrTiO.sub.3]-c[BiFeO.sub.3]-d[(K.sub.xBi.sub.1-x)TiO.sub.3]; wherein 0.4<x<0.6; 0.1<a<0.4; 0.01<b0.2; c0.05; d0.01; and a+b+c+d=1 optionally comprising an A- or B-site metal dopant in an amount of up to 2 at. %.

Ceramic

There is disclosed a piezoelectric ceramic having the composition: a[PbTiO.sub.3]-b[SrTiO.sub.3]-c[BiFeO.sub.3]-d[(K.sub.xBi.sub.1-x)TiO.sub.3]; wherein 0.4<x<0.6; 0.1<a<0.4; 0.01<b0.2; c0.05; d0.01; and a+b+c+d=1 optionally comprising an A- or B-site metal dopant in an amount of up to 2 at. %.

METHODS OF IDENTIFYING AND PREPARING A CERAMIC MATERIAL EXHIBITING AN ELECTRIC FIELD INDUCED STRAIN
20200095169 · 2020-03-26 ·

The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 900.5 degrees.

METHODS OF IDENTIFYING AND PREPARING A CERAMIC MATERIAL EXHIBITING AN ELECTRIC FIELD INDUCED STRAIN
20200095169 · 2020-03-26 ·

The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 900.5 degrees.