C04B35/499

Radiofrequency component incorporating temperature compensated dielectric material
11306032 · 2022-04-19 · ·

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Radiofrequency component incorporating temperature compensated dielectric material
11306032 · 2022-04-19 · ·

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Hard piezoelectric ceramic composition for multilayer piezoelectric transformers

A composition includes at least one Pb/Ni/Nb - Pb/Mg/W - Pb/Zr/Ti mixed oxide. A piezoelectric device may be made by providing at least two layers comprising the composition and coated with an outer electrode material; providing a plurality of layers comprising the composition and coated with an inner electrode material; combining or stacking a plurality of layers coated with inner electrode materials between two outer electrodes; and sintering or co-firing the inner electrode materials and outer electrode materials at a temperature at or below about 1000° C.

Hard piezoelectric ceramic composition for multilayer piezoelectric transformers

A composition includes at least one Pb/Ni/Nb - Pb/Mg/W - Pb/Zr/Ti mixed oxide. A piezoelectric device may be made by providing at least two layers comprising the composition and coated with an outer electrode material; providing a plurality of layers comprising the composition and coated with an inner electrode material; combining or stacking a plurality of layers coated with inner electrode materials between two outer electrodes; and sintering or co-firing the inner electrode materials and outer electrode materials at a temperature at or below about 1000° C.

RADIOFREQUENCY COMPONENTS INCORPORATING TEMPERATURE COMPENSATED DIELECTRIC MATERIAL
20220204414 · 2022-06-30 ·

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

RADIOFREQUENCY COMPONENTS INCORPORATING TEMPERATURE COMPENSATED DIELECTRIC MATERIAL
20220204414 · 2022-06-30 ·

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Silicotitanate molded body, production method thereof, adsorbent for cesium and/or strontium comprising silicotitanate molded body, and decontamination method for radioactive waste solution by using adsorbent

Provided are a silicotitanate molded body having high strength and reduced generation of fine powder, a production method thereof, an adsorbent comprising the silicotitanate molded body, and a decontamination method of radioactive cesium and/or radioactive strontium by using the adsorbent. The silicotitanate molded body comprises: crystalline silicotitanate particles that have a particle size distribution in which 90% or more, on volume basis, of the particles have a particle size within a range of 1 μm or more and 10 μm or less and that are represented by a general formula of A.sub.2Ti.sub.2O.sub.3(SiO.sub.4).nH.sub.2O wherein A represents one or two alkali metal elements selected from Na and K, and n represents a number of 0 to 2; and an oxide of one or more elements selected from the group consisting of aluminum, zirconium, iron, and cerium.

HIGH TEMPERATURE SINTERING SYSTEMS AND METHODS
20220219986 · 2022-07-14 ·

Disclosed are fast high-temperature sintering systems and methods. A method of fabrication includes positioning a material at a distance of 0-1 centimeters from a first conductive carbon element and at a distance of 0-1 centimeters from a second conductive carbon element, heating the first conductive carbon element and the second conductive carbon element by electrical current to a temperature between 500° C. and 3000° C., inclusive, and fabricating a sintered material by heating the material with the heated first conductive carbon element and the heated second conductive carbon element for a time period between one second and one hour. Other variations of the fast high-temperature sintering systems and methods are also disclosed. The disclosed systems and methods can quickly fabricate unique structures not feasible with conventional sintering processes.

Method for producing piezoelectric single crystal ingot and piezoelectric single crystal ingot

A method for producing a piezoelectric single crystal ingot shows small variation in the concentration of PbTiO.sub.3 in the growth direction of single crystal. A complete solid solution-type piezoelectric single crystal ingot is produced by using the Bridgman method, including: filling a starting material, wherein a relaxor having a compositional formula Pb(B.sub.1, B.sub.2)O.sub.3 is blended with lead titanate having a composition PbTiO.sub.3 to give a preset composition, into a crucible for growth; heating to the melting temperature to give a melted liquid layer; then moving the crucible for growth toward the low temperature side; and thus starting one-direction solidification from the lower part of the crucible to thereby produce a single crystal. During solidification, the feedstock containing the relaxor and lead titanate having a maximum grain size ≤3 mm is continuously supplied into the crucible.

Method for producing piezoelectric single crystal ingot and piezoelectric single crystal ingot

A method for producing a piezoelectric single crystal ingot shows small variation in the concentration of PbTiO.sub.3 in the growth direction of single crystal. A complete solid solution-type piezoelectric single crystal ingot is produced by using the Bridgman method, including: filling a starting material, wherein a relaxor having a compositional formula Pb(B.sub.1, B.sub.2)O.sub.3 is blended with lead titanate having a composition PbTiO.sub.3 to give a preset composition, into a crucible for growth; heating to the melting temperature to give a melted liquid layer; then moving the crucible for growth toward the low temperature side; and thus starting one-direction solidification from the lower part of the crucible to thereby produce a single crystal. During solidification, the feedstock containing the relaxor and lead titanate having a maximum grain size ≤3 mm is continuously supplied into the crucible.