A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K.sub.1-xNa.sub.x).sub.mNbO.sub.3-nCaTiO.sub.3, wherein m, n, and x in the general formula are within the ranges of 0.87?m?0.97, 0?n?0.065, and 0?x?1.

A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K.sub.1-xNa.sub.x).sub.mNbO.sub.3-nCaTiO.sub.3, wherein m, n, and x in the general formula are within the ranges of 0.87?m?0.97, 0?n?0.065, and 0?x?1.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70s1.00, 0t0.30, 0.70s+t1.00, 0x0.50, 0.10a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al arc contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00 in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.50, 0.50s+t1.00, 0.50<x1.50, 0.30a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

Textured PMN-PZT fabricated by templated grain growth (TGG) method has a piezoelectric coefficient (d) of 3 to 5 times that of its random counterpart. By combining this TGG method with low-temperature co-firing ceramics (LTCC) techniques, co-fired multilayer textured piezoelectric ceramic materials with inner electrodes were produced at a temperature as low as 925 C., which silver could be used. Trilayer PMN-PZT ceramics prepared by this method show a strain increase of 2.5 times, a driving voltage decrease of 3 times, and an equivalent piezoelectric coefficient (d*) improvement of 10 to 15 times that of conventional random ceramic counterparts. Further, a co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was also synthesized. The integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure achieves strong magnetoelectric coupling. These new materials have promising applications including as actuators, ultrasonic transducers, and use in energy harvesters.

Textured PMN-PZT fabricated by templated grain growth (TGG) method has a piezoelectric coefficient (d) of 3 to 5 times that of its random counterpart. By combining this TGG method with low-temperature co-firing ceramics (LTCC) techniques, co-fired multilayer textured piezoelectric ceramic materials with inner electrodes were produced at a temperature as low as 925 C., which silver could be used. Trilayer PMN-PZT ceramics prepared by this method show a strain increase of 2.5 times, a driving voltage decrease of 3 times, and an equivalent piezoelectric coefficient (d*) improvement of 10 to 15 times that of conventional random ceramic counterparts. Further, a co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was also synthesized. The integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure achieves strong magnetoelectric coupling. These new materials have promising applications including as actuators, ultrasonic transducers, and use in energy harvesters.

A nano-composite structure comprises of an amorphous matrix with embedded nano-crystallites. The nano-crystallites are precipitated from the amorphous matrix via heat treatment of a solution mixture of metal salts or metalorganic compounds to an appropriate temperature range and with a suitable duration, or heating of a mixture of non-crystalline compounds. The nano-crystallites are self-assembled in the amorphous matrix without forming agglomerates or distinguished grain boundaries. The nano-composite structure can be used for transparent display, transparent optical ceramics, protection armor, nuclear protection, pulsed power, high voltage electronics, high energy storage system and high power microwave systems.

A nano-composite structure comprises of an amorphous matrix with embedded nano-crystallites. The nano-crystallites are precipitated from the amorphous matrix via heat treatment of a solution mixture of metal salts or metalorganic compounds to an appropriate temperature range and with a suitable duration, or heating of a mixture of non-crystalline compounds. The nano-crystallites are self-assembled in the amorphous matrix without forming agglomerates or distinguished grain boundaries. The nano-composite structure can be used for transparent display, transparent optical ceramics, protection armor, nuclear protection, pulsed power, high voltage electronics, high energy storage system and high power microwave systems.