Provided is a SiC sintered body which contains nitrogen atoms, wherein a ratio R.sub.max/R.sub.ave of a maximum volume resistivity R.sub.max of the sintered body to an average volume resistivity R.sub.ave of the sintered body is 1.5 or lower; a ratio R.sub.min/R.sub.ave of a minimum volume resistivity R.sub.min of the sintered body to the average volume resistivity R.sub.ave is 0.7 or higher; and a relative density of the sintered body is 98% or higher.

Methods of producing a ceramic article include heating the ceramic green body containing a quantity of one or more organic materials to extract only a fraction of the organic materials from the ceramic green body by exposing the ceramic green body to a process atmosphere which is heated to a hold temperature of from 225 C. to about 400 C. and has from 2% to 7% O.sub.2 by volume of the process atmosphere. The method further includes cooling the ceramic green body to a temperature of below 200 C., exposing the ceramic green body to a higher concentration of O.sub.2 than in the process atmosphere of the heating step, and firing the ceramic green body to form the ceramic article. Volatile extraction units for implementing the methods are also described.

Provided is a SiC sintered body which contains nitrogen atoms, wherein a ratio R.sub.max/R.sub.ave of a maximum volume resistivity R.sub.max of the sintered body to an average volume resistivity R.sub.ave of the sintered body is 1.5 or lower; a ratio R.sub.min/R.sub.ave of a minimum volume resistivity R.sub.min of the sintered body to the average volume resistivity R.sub.ave is 0.7 or higher; and a relative density of the sintered body is 98% or higher.

Provided is a SiC sintered body which contains nitrogen atoms, wherein a ratio R.sub.max/R.sub.ave of a maximum volume resistivity R.sub.max of the sintered body to an average volume resistivity R.sub.ave of the sintered body is 1.5 or lower; a ratio R.sub.min/R.sub.ave of a minimum volume resistivity R.sub.min of the sintered body to the average volume resistivity R.sub.ave is 0.7 or higher; and a relative density of the sintered body is 98% or higher.

A method of manufacturing a silicon carbide (SiC) sintered body and a SiC sintered body obtained by the method are provided. The method includes: preparing a composite powder by subjecting a SiC raw material and a sintering aid raw material to mechanical alloying; and sintering the composite powder, wherein the sintering aid is at least one selected from the group consisting of an AlC-based material, an AlBC-based material, and a BC-based material. Accordingly, a SiC sintered body that can be sintered at low temperature, can be densified, and has high strength and high electrical conductivity can be prepared.

Provided is a silicon-carbide-sintered body in which plural crystal grains including silicon carbide are densely formed so as to be adjacent to each other. Sc and Y elements are present in a rich phase at a triple point at which interfaces of the crystal grains forming the sintered body meet each other without solid-solution of the elements in the crystal grains. Accordingly, sintering is feasible at a temperature of 1950 C. or lower, and an EB layer including a rare-earth-Si oxide containing the Sc and Y elements is formed on a surface thereof without an EB coating process, and is also formed up to the inner region of a silicon carbide base, resulting in strong three-dimensional bonding, so that the possibility of peeling of the EB layer is reduced and a new EB layer is formed even when peeling occurs, increasing the resistance to corrosion of the silicon carbide material.

Provided is a silicon-carbide-sintered body in which plural crystal grains including silicon carbide are densely formed so as to be adjacent to each other. Sc and Y elements are present in a rich phase at a triple point at which interfaces of the crystal grains forming the sintered body meet each other without solid-solution of the elements in the crystal grains. Accordingly, sintering is feasible at a temperature of 1950 C. or lower, and an EB layer including a rare-earth-Si oxide containing the Sc and Y elements is formed on a surface thereof without an EB coating process, and is also formed up to the inner region of a silicon carbide base, resulting in strong three-dimensional bonding, so that the possibility of peeling of the EB layer is reduced and a new EB layer is formed even when peeling occurs, increasing the resistance to corrosion of the silicon carbide material.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.