A molding composition contains a powder, a wax, an adhesive component, a molding component, and a plasticizer, in which a melt flow rate of the adhesive component at 190° C. is 200 g/10 min or more, and a density of the plasticizer is 1.0 g/cm.sup.3 or less.

A hard material which, when used as a material of a sintered material, makes it possible to obtain a sintered material with excellent abrasion resistance, a sintered material, a cutting tool including the sintered material, a method for manufacturing the hard material and a method for manufacturing the sintered material are provided. The hard material contains aluminum, nitrogen, and at least one element selected from the group consisting of titanium, chromium, and silicon, and has a cubic rock salt structure.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

In one aspect, articles employing CVD coatings deposited at low temperatures are described herein. Briefly, a coated article described herein comprises a substrate and a refractory coating adhered to the substrate, the refractory coating including a layer of TiN deposited by thermal CVD, the layer of TiN having an average crystallite size of 0.05 μm to 0.5 μm and residual tensile stress of 100 MPa to 700 MPa.

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.

A three-dimensional shaped article production method includes a layer formation step of forming a layer by ejecting a composition containing particles and a solvent in a predetermined pattern using a dispenser, a measurement step of determining the height of the layer, and a bonding step of subjecting a stacked body including a plurality of layers to a bonding treatment for bonding the particles, wherein when n represents an arbitrary integer of 1 or more, by selecting driving waveform data for the dispenser when ejecting the composition from a data group including a plurality of pieces of driving waveform data based on the information of the height of the layer in the n-th position (n-th layer) determined in the measurement step, the ejection amount of the composition per unit area onto the n-th layer in the layer formation step of forming the layer in the (n+1)th position ((n+1)th layer) is adjusted.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.

An electro-conductive B.sub.4C—TiB.sub.2 has a microstructure in which large B.sub.4C grains are coated by small TiB.sub.2 grains. The composite ceramic includes 10˜30% by volume of TiB.sub.2. A method for preparing the electro-conductive B.sub.4C—TiB.sub.2 composite ceramic includes: (1) weighing B.sub.4C, TiC, and amorphous B powder; (2) mixing evenly and drying thoroughly the powders; and (3) loading the mixed powder into a graphite mold; and placing the graphite mold in a spark plasma sintering furnace for sintering under vacuum, where the sintering is performed at 2000° C. and 50 MPa for 5˜20 min.

An object shaping method includes a step of forming a powder layer using first powder, a step of placing second powder having an average particle diameter smaller than an average particle diameter of the first powder at a part of a region of the powder layer, and a first heating step of heating the powder layer in which the second powder is placed. The average particle diameter is equal to or larger than 1 nm and equal to or smaller than 500 nm, and the first heating step performs heating the powder layer at a temperature at which particles contained in the second powder are sintered or melted.