C04B35/58092

HIGH TEMPERATURE SINTERING SYSTEMS AND METHODS
20220219986 · 2022-07-14 ·

Disclosed are fast high-temperature sintering systems and methods. A method of fabrication includes positioning a material at a distance of 0-1 centimeters from a first conductive carbon element and at a distance of 0-1 centimeters from a second conductive carbon element, heating the first conductive carbon element and the second conductive carbon element by electrical current to a temperature between 500° C. and 3000° C., inclusive, and fabricating a sintered material by heating the material with the heated first conductive carbon element and the heated second conductive carbon element for a time period between one second and one hour. Other variations of the fast high-temperature sintering systems and methods are also disclosed. The disclosed systems and methods can quickly fabricate unique structures not feasible with conventional sintering processes.

Microelectronic device substrate formed by additive process

A microelectronic device is formed by forming at least a portion of a substrate of the microelectronic device by one or more additive processes. The additive processes may be used to form semiconductor material of the substrate. The additive processes may also be used to form dielectric material structures or electrically conductive structures, such as metal structures, of the substrate. The additive processes are used to form structures of the substrate which would be costly or impractical to form using planar processes. In one aspect, the substrate may include multiple doped semiconductor elements, such as wells or buried layers, having different average doping densities, or depths below a component surface of the substrate. In another aspect, the substrate may include dielectric isolation structures with semiconductor material extending at least partway over and under the dielectric isolation structures. Other structures of the substrate are disclosed.

IN SITU SYNTHESIS, DENSIFICATION AND SHAPING OF NON-OXIDE CERAMICS BY VACUUM ADDITIVE MANUFACTURING TECHNOLOGIES

A vacuum additive manufacturing process enabling obtaining, through a single-step process, the synthesis, controlled densification and shaping of non-oxide materials as well as composite materials containing non-oxide as matrices or reinforcements, in porous as well as fully dense ceramic components, with a tailored nano-micro-macrostructure.

METHOD FOR MANUFACTURING A PART MADE FROM CMC

A process for manufacturing a part made of composite material with a matrix at least predominantly made of ceramic includes producing a fibrous structure by three-dimensional or multilayer weaving; shaping the fibrous structure to form a fibrous preform core; depositing an interphase on the fibers of the preform core; consolidating the preform core by partial densification of the core including the formation of a matrix phase by chemical vapor infiltration or by a liquid process; depositing a powder of ceramic particles in the porosity of the preform core; draping one or more layers of pre-impregnated non-woven fibers over all or part of the outer surface of the preform core; heat treatment of the preform core and of the pre-impregnated layer(s) to form a hybrid fibrous preform; further densifying by infiltration of the hybrid fibrous preform with an infiltration composition containing at least silicon to obtain a ceramic matrix composite part.

SELF-HEALING MATRIX FOR A CERAMIC COMPOSITE

A method for forming a self-healing ceramic matrix composite (CMC) component includes depositing a first self-healing particulate material in a first region of a CMC preform of the CMC component and depositing a second self-healing particulate material having a different chemical composition than the first self-healing particulate material in a second region of the CMC preform distinct from the first region.

CERAMIC MATRIX COMPOSITE STRUCTURES WITH CONTROLLED MICROSTRUCTURES FABRICATED USING CHEMICAL VAPOR INFILTRATION (CVI)

According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.

Ceramic matrix composite structures with controlled microstructures fabricated using chemical vapor infiltration (CVI)

According to a method set forth herein a plurality of preform plies having first and second preform plies can be associated together to define a preform. The preform can be subject to chemical vapor infiltration (CVI) processing to define a ceramic matrix composite (CMC) structure.

Hydrocarbon conversion

The invention relates to hydrocarbon conversion, to equipment and materials useful for hydrocarbon conversion, and to processes for carrying out hydrocarbon conversion, e.g., hydrocarbon pyrolysis processes. The hydrocarbon conversion is carried out in a reactor which includes at least one channeled member that comprises refractory and has an open frontal area≤55%. The refractory can include non-oxide ceramic.

Electric heating type support, exhaust gas purifying device, and method for producing electric heating type support
11092052 · 2021-08-17 · ·

An electric heating support includes an electrically conductive honeycomb structure having an outer peripheral wall and porous partition walls disposed on an inner side of the outer peripheral wall, the porous partition walls defining a plurality of cells, each cell penetrating from one end face to other end face to form a flow path. A pair of metal terminals are disposed so as to face each other across a central axis of the honeycomb structure, each metal terminal being joined to a surface of the honeycomb structure via a welded portion. The honeycomb structure is composed of ceramics and a metal. The honeycomb structure contains 40% by volume or less of the metal. The welded portion of the honeycomb structure has a surface containing 40% by volume or more of the metal.

DENSE COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.