A probe card board in the present disclosure includes a plurality of through holes designed to receive a probe brought into contact with a measurement object. The probe card board is composed of silicon nitride based ceramics. The probe card board includes a first surface opposed to the measurement object and a second surface located opposite to the first surface. The probe card board contains a plurality of crystal phases of metal silicide. Metal constituting the metal silicide is at least one kind selected from among molybdenum, chrome, iron, nickel, manganese, vanadium, niobium, tantalum, cobalt and tungsten.

In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.

In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

Ceramic particles for use in a solar power tower and methods for making and using the ceramic particles are disclosed. The ceramic particle can include a sintered ceramic material formed from a mixture of a raw material and MnO. The sintered ceramic material can include about 0.01 wt % to about 10 wt % MnO, about 0.1 wt % to about 20 wt % Fe.sub.2O.sub.3, and about 0.01 wt % to about 10 wt % Mn.sub.2O.sub.3. The ceramic particle can have a size from about 8 mesh to about 170 mesh.

Ceramic particles for use in a solar power tower and methods for making and using the ceramic particles are disclosed. The ceramic particle can include a sintered ceramic material formed from a mixture of a raw material and MnO. The sintered ceramic material can include about 0.01 wt % to about 10 wt % MnO, about 0.1 wt % to about 20 wt % Fe.sub.2O.sub.3, and about 0.01 wt % to about 10 wt % Mn.sub.2O.sub.3. The ceramic particle can have a size from about 8 mesh to about 170 mesh.

The invention relates to the use of ceramic parts that at least partly consist of a ceramic foam in the field of medical technology.

The invention relates to the use of ceramic parts that at least partly consist of a ceramic foam in the field of medical technology.

A method of manufacturing pre-formed, customized, ceramic, labial/lingual orthodontic clear aligner attachments (CCAA) by additive manufacturing (AM) may comprise measuring dentition data of a profile of teeth of a patient, based on the dentition data, creating a three dimensional computer-assisted design (3D CAD) model of the patient's teeth using reverse engineering, and saving the 3D CAD model, designing a 3D CAD structure model for one or more CCAA on various parts of each tooth, importing data related to the 3D CAD CCAA structure model into an AM machine, directly producing the CCAA in the ceramic slurry-based AM machine by layer manufacturing, enabling the provider to deliver patient-specific CCAA's by an indirect bonding method to the patient's teeth to improve the efficacy and retention of the clear aligners.

A process for producing a silicon nitride powder characterized by comprising a step of providing a starting material powder containing not less than 90% by mass of a silicon powder; the step of filling a heat-resistant reaction vessel with the starting material powder; a step of obtaining a massive product thereof by a combustion synthesis reaction by igniting the starting material powder filled in the reaction vessel in a nitrogen atmosphere and permitting a heat of nitriding combustion of silicon to propagate to the whole starting material powder; and a step of mechanically milling the massive product by a dry method.