In a manufacturing method for manufacturing a dispersion body, a plurality of types of solid particles, water, and a liquid dispersant are mixed. In the manufacturing method, at least two types of the solid particles and at least one type of the dispersant that are selected based on a material type selection method are used, and at least an optimal amount of the dispersant that is determined based on an optimal amount determination method is added and mixed. The material type selection method is based on a Hansen solubility parameter distance to water, Hansen spheres of the solid particles, and a Hansen sphere of the dispersant.

Paste compositions for additive manufacturing and methods for the same are provided. The paste composition may include an organic vehicle, and one or more powders dispersed in the organic vehicle. The organic vehicle may include a solvent, a polymeric binder, a thixotropic additive, and a dispersant. The organic vehicle may be configured to provide the paste composition with a suitable viscosity. The organic vehicle may also be configured to provide a stable paste composition for a predetermined period of time.

The present disclosure relates to the technical field of ceramic powder preparation, and discloses a zirconia/titania/cerium oxide doped rare earth tantalum/niobate RETa/NbO.sub.4 ceramic powder and a preparation method thereof. A general chemical formula of the ceramic powder is RE.sub.1-x(Ta/Nb).sub.1-x(Zr/Ce/Ti).sub.2xO.sub.4, 0<x<1, the crystal structure of the ceramic powder is orthorhombic, the lattice space group of the ceramic powder is C222.sub.1, the particle size of the ceramic powder ranges from 10 to 70 μm, and particles of the ceramic powder are spherical. During preparation, the raw materials are ball-milled before a high temperature solid phase reaction, then mixed with a solvent and an organic binder to obtain a slurry C, then centrifuged and atomized to obtain dry pellets, and finally sintered to obtain a zirconia/titanium oxide/cerium oxide doped rare earth tantalum/niobate RETa/NbO.sub.4 ceramic powder, which satisfies the requirements of APS technology for ceramic powders.

The invention relates to a strontium aluminate mixed oxide precursor and a method for producing same, as well as to a strontium aluminate mixed oxide and method for producing same. The strontium aluminate mixed oxide precursor can be transformed into a strontium aluminate mixed oxide at relatively low temperature. The strontium aluminate mixed oxide is characterized by substantially spherically-shaped particles with a spongy- or porous bone-like microstructure. A luminescent material including a strontium aluminate mixed oxide is also provided.

A method includes molding a raw material powder containing a ceramic powder and a thermoplastic resin having a glass transition temperature higher than room temperature into a shape by isostatic pressing and in which a raw material powder slurry is prepared by adding the ceramic powder and the thermoplastic resin to a solvent so that the thermoplastic resin is 2% by weight or more and 40% by weight or less with respect to a total weight of the ceramic powder and the thermoplastic resin, a cast-molded body is to formed by wet-casting the raw material powder slurry into a shape, dried, and subjected to first-stage isostatic press molding at a temperature lower than the glass transition temperature of the thermoplastic resin, then this first-stage press-molded body is heated to the glass transition temperature of the thermoplastic resin or above, and warm isostatic press (WIP) molding is performed.

A zirconia sintered body is provided and includes yttria and zirconia, containing yttria by a content ranging from 4.5 mol % or more to 6.5 mol % or less and zirconia as the remainder, the total light transmittance of a 1-mm thick sample measured in compliance with JIS K 7361-1 being 46.5% or higher, the three-point bending strength being 700 MPa or higher, and a ratio of an integrated value for the total light transmittance to an integrated value for the parallel light transmittance of a 1-mm thick sample measured at the measurement wavelength ranging from 400 to 700 nm being 1.3% or less.

A synthesis method for producing a refractory oxide-ceramic material of CaZrO.sub.3, in particular in the form of a refractory granular material that is preferably mechanically comminuted, in particular crushed and/or ground, as well as to a batch and a coarse ceramic, shaped or unshaped, refractory product containing at least one pre-synthesized refractory calcium zirconate-containing granular material.

A solid electrolyte ceramic material that includes sintered solid electrolyte particles containing, at least, lithium (Li), lanthanum (La), bismuth (Bi), and oxygen (O), wherein the Bi is at a higher concentration in a vicinity of a grain boundary of the sintered solid electrolyte particles than in a grain interior of the sintered solid electrolyte particles.

A sintered bead with the following crystal phases, in percentages by mass based on crystal phases: 25%≤zircon, or “Z.sub.1”, ≤94%; 4%≤stabilized zirconia+stabilized hafnia, or “Z.sub.2”, ≤61%; monoclinic zirconia+monoclinic hafnia, or “Z.sub.3”≤50%; corundum≤57%; crystal phases other than Z.sub.1, Z.sub.2, Z.sub.3 and corundum<10%; the following chemical composition, in percentages by mass based on oxides: 33%≤ZrO.sub.2+HfO.sub.2, or “Z.sub.4”≤83.4%; HfO.sub.2≤2%; 10.6%≤SiO.sub.2≤34.7%; Al.sub.2O.sub.3≤50%; 0%≤Y.sub.2O.sub.3, or “Z.sub.5”; 0%≤CeO.sub.2, or “Z.sub.6”; 0.3%≤CeO.sub.2+Y.sub.2O.sub.3≤19%, provided that (1) CeO.sub.2+3.76*Y.sub.2O.sub.3≥0.128*Z, and (2) CeO.sub.2+1.3*Y.sub.2O.sub.3≤0.318*Z, with Z=Z.sub.4+Z.sub.5+Z.sub.6−(0.67*Z.sub.1*(Z.sub.4+Z.sub.5+Z.sub.6)/(0.67*Z.sub.1+Z.sub.2+Z.sub.3)); MgO≤5%; CaO≤2%; oxides other than ZrO.sub.2, HfO.sub.2, SiO.sub.2, Al.sub.2O.sub.3, MgO, CaO, CeO.sub.2 and Y.sub.2O.sub.3<5.0%.

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.