An image acquisition semiconductor film for a high-resolution mass spectrometric imaging system, and a preparation method and an application. The image acquisition semiconductor film for the high-resolution mass spectrometric imaging system is prepared by using the following method: weighing semiconductor nanometer particles, putting the semiconductor nanometer particles into a muffle furnace for burning first, further grinding by using an agate mortar, and uniformly dispersing the semiconductor nanometer particles so as to obtain semiconductor nanometer powder; and finally, pressing the semiconductor nanometer powder in a compressor so as to obtain the semiconductor film. Based on laser activated electron tunnelling as well as photoelectron capture ionization and dissociation, sample molecules are ionized without background interference; the limitation of a conventional MALDI substrate is overcome; the semiconductor film is simple and easy to obtain, is stable in mass spectrometric signal, has a uniform and smooth surface, generates no background interference, and can be used for fingerprint analyzing and animal and plant tissue slice analysis; and the semiconductor film is particularly suitable for accurate mass spectrometric imaging of small molecular substances, so that quality control and industrialization can be performed conveniently.

A method of inhibiting an irregular aggregation of a nanosized powder includes (A) providing a nanosized ceramic powder to perform thereon a thermal analysis and thereby attain an endothermic peak temperature; (B) performing an impurity-removal heat treatment on the nanosized ceramic powder at a temperature higher than the endothermic peak temperature; (C) switching the nanosized ceramic powder from a temperature environment of the impurity-removal heat treatment to an environment of a temperature higher than a phase change temperature of the nanosized ceramic powder, followed by performing a calcination heat treatment on the nanosized ceramic powder in the environment of the temperature higher than the phase change temperature of the nanosized ceramic powder, wherein the nanosized ceramic powder skips the temperature environment between impurity-removal heat treatment and calcination heat treatment to shun generating a vermicular structure, avoid crystalline irregularity and abnormal growth, reduce particle aggregation, and achieve satisfactory distribution.

A gas nozzle according to an embodiment of the present invention includes a columnar main body including a ceramic sintered body having a through hole through which gas flows. An outlet of the through hole for the gas is formed on one end face of the main body. An inner wall of the through hole has a first region located in a vicinity of the outlet, and a second region located further inward of the main body than the first region. The first region and the second region each include a sintered surface of the ceramic sintered body. Average crystal grain size in the first region is larger than average crystal grain size in the second region.

A piezoelectric ceramic has a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains present sporadically in the primary phase. The piezoelectric ceramic of high kr and high specific dielectric constant can be sintered at low temperature and exhibit minimal characteristics variations.

A method for producing a photo-luminescent material, including the following steps: (1) producing, according to a sol-gel method, a sol and then a gel of first precursors of a first substance from the sol; (2) crushing the gel; (3) optionally, annealing the gel in order to form first particles of the first substance of which the average size is between 1 pm and 20 um; (4) producing a colloidal dispersion of second particles of a second substance, different from the first substance or identical to the first substance, of which the average size is between 5 nm and 400 nm; (5) mixing the colloidal dispersion with the sol in step (1) before forming the gel or with the first particles after step (3); and (6) annealing the mixture obtained in step (5), resulting in an increase in the compactness of the mixture, the average size of the second particles after annealing being between 100 nm and 900 nm. A photo-luminescent material including a mixture of first particles of a first photo-luminescent substance of which the average size is between 1 pm and 20 pm and second particles of a second photo-luminescent substance, different from the first photo-luminescent substance or identical to the first photo-luminescent substance, of which the average size is between 100 nm and 900 nm.

The present invention provides a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor, and exhibiting good piezoelectricity. The piezoelectric material contains 0.04 percent by mole or more and 2.00 percent by mole or less of Cu relative to 1 mol of metal oxide represented by General formula (1) below.
((Na.sub.1-zLi.sub.z).sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (in Formula, 0.70≦x≦0.99, 0.75≦y≦0.99, and 0<z<0.15, and x<y)  General formula (1)

A zirconia sintered body, where when cross-sectional area of each zirconia crystal-grain is calculated in image of cross section of zirconia sintered body, converted crystal-grain size of each zirconia crystal-grain is calculated based on cross-sectional area where each zirconia crystal-grain has circular cross-sectional shape, zirconia crystal-grains are classified into class of <0.4 μm, class of ≧0.4 and <0.76 μm, and class of ≧0.76 μm based on converted crystal-grain size, total cross-sectional area of zirconia crystal-grains is calculated in each of classes, and rate of cross-sectional area to total cross-sectional area of all zirconia crystal-grains whose cross-sectional area has been calculated is calculated in each class, rate of cross-sectional area of zirconia crystal-grains in class of <0.4 μm is 4% to 35%, rate of cross-sectional area of zirconia crystal-grains in class of ≧0.4 and <0.76 μm is 24% to 57%, and rate of cross-sectional area of zirconia crystal-grains in class of ≧0.76 μm-is 16% to 62%.

Provided is a precursor with which it is possible to form a solid electrolyte and negative electrode active material while preventing loss of mass during firing at 1,000° C. or lower. A precursor for forming a composite product of lithium titanate and lithium lanthanum titanate by firing, wherein a precursor of a lithium titanate composite product is used that is characterized in comprising a solid material that includes a composite salt of Li and Ti and an La source compound. Such a precursor of a lithium titanate composite product is obtained by a production method that is characterized in including a step for forming a solid material by heating a mixture that includes at least a Ti source, a Li source, and solvent by solvothermal treatment.

A method of treating a preceramic material includes providing a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M, where Si is silicon, O is oxygen and M is at least one metal that includes at least one transition metal, and thermally converting the preceramic polycarbosilane or polycarbosiloxane that includes the moiety Si—O-M material into a ceramic material.

A sintered Ni ferrite body having a composition comprising, calculated as oxide, 47.0-48.3% by mol of Fe.sub.2O.sub.3, 14.5% or more and less than 25% by mol of ZnO, 8.2-10.0% by mol of CuO, and more than 0.6% and 2.5% or less by mol of CoO, the balance being NiO and inevitable impurities, and having an average crystal grain size of more than 2.5 μm and less than 5.5 μm.