The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A method includes molding a raw material powder containing a ceramic powder and a thermoplastic resin having a glass transition temperature higher than room temperature into a shape by isostatic pressing and in which a raw material powder slurry is prepared by adding the ceramic powder and the thermoplastic resin to a solvent so that the thermoplastic resin is 2% by weight or more and 40% by weight or less with respect to a total weight of the ceramic powder and the thermoplastic resin, a cast-molded body is to formed by wet-casting the raw material powder slurry into a shape, dried, and subjected to first-stage isostatic press molding at a temperature lower than the glass transition temperature of the thermoplastic resin, then this first-stage press-molded body is heated to the glass transition temperature of the thermoplastic resin or above, and warm isostatic press (WIP) molding is performed.

The disclosed technology relates to a ceramic composition and an article formed therefrom. A ceramic article for radio frequency applications is formed of a ceramic material having a chemical formula represented by: Bi.sub.1.0+aY.sub.2.0-a-x-2yCa.sub.x+2yFe.sub.5-x-yM.sup.IV.sub.xV.sub.yO.sub.12 or Bi.sub.1.0+aY.sub.2.0-a-2yCa.sub.2yFe.sub.5-y-zV.sub.yIn.sub.zO.sub.12. The ceramic material has a composition such that a normalized change in saturation magnetization (Δ4πMs), defined as Δ4πMs=[(4πMs at 20° C.)-(4πMs at 120° C.)]/(4πMs at 20° C.), is less than about 0.35.

This disclosure relates to polycrystalline cubic boron nitride material with cBN particles in a metal matrix comprising zirconium nitride and/or vanadium nitride precipitates or grains.

The present invention relates to different inorganic ceramic coatings whose chemical compositions comprise silicates, acids, metallic oxysalts such as tungstates and molybdates, water, and non-metallic oxides such as silicon oxide. Said water-based inorganic ceramic coatings improve the ceramic, anti-corrosive and resistance properties of the metal substrates that are coated with same. Likewise, the present invention relates to a sol-gel process for synthesizing said coatings in which the non-metallic oxide, before being mixed with the rest of the components of the chemical compositions as claimed, can be pre-treated with hydrochloric acid and ammonium hydroxide, or can be sonicated to achieve a particle size in the range from approximately 160 to approximately 180 nm. Finally, the present invention also relates to a method for coating the metal parts with the inorganic ceramic coatings as claimed in the present invention.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A ferrite sintered magnet comprises a plurality of main phase grains containing a ferrite having a hexagonal structure, wherein at least some of the main phase grains are core-shell structure grains each having a core and a shell covering the core; and wherein the minimum value of the content of La in the core is [La]c atom %; the minimum value of the content of Co in the core is [Co]c atom %; the maximum value of the content of La in the shell is [La]s atom %; the maximum value of the content of Co in the shell is [Co]s atom %; [La]c+[Co]c is 3.08 atom % or more and 4.44 atom % or less; and [La]s+[Co]s is 7.60 atom % or more and 9.89 atom % or less.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.