Patent classifications
C04B35/62685
MANUFACTURING METHOD OF CERAMIC POWDER
A manufacturing method of ceramic powder includes mixing a barium carbonate having a specific surface are of 15 m.sup.2/g or more, a titanium dioxide having a specific surface area of 20 m.sup.2/g or more, a first compound of a donor element having a larger valence than Ti, and a second compound of an acceptor element having a smaller valence than Ti and having a larger ion radium than Ti and the donor element, and synthesizing barium titanate powder by calcining the barium carbonate, the titanium dioxide, the first compound and the second compound until a specific surface area of the barium titanate powder becomes 4 m.sup.2/g or more and 25 m.sup.2/g or less.
CUBIC BORON NITRIDE SINTERED BODY AND COATED CUBIC BORON NITRIDE SINTERED BODY
A cubic boron nitride sintered body has between 50% and 75% cubic boron nitride by volume and between 25% and 50% binder phase by volume, and inevitable impurities. The binder phase contains an Al compound and a Zr compound. The Al compound contains Al and one or more of N, O and B; and the Zr compound contains Zr and one or more of C, N, O and B. At a polished surface of the cubic boron nitride sintered body, 40% or more of the Zr compounds satisfy the ratio 0.25≦n/N≦0.8, where: N represents the number of line segments drawn radially at equal intervals from a center of gravity of a given Zr compound to a boundary with a non-Zr compound; and n represents the number among those N line segments which intersect a boundary between the given Zr compound and cubic boron nitride.
Method for Making Ferroelectric Material Thin Films
A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.
PRECURSOR SOLUTION AND METHOD FOR THE PREPARATION OF A LEAD-FREE PIEZOELECTRIC MATERIAL
The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn, and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, ketones, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.
METHOD FOR PREPARING INFRARED RADIATION CERAMIC MATERIAL
A method for preparing an infrared radiation ceramic material includes mixing and ball milling raw materials of Fe.sub.2O.sub.3, MnO.sub.2 and CuO in a mass ratio to obtain a mixed powder; pressing the mixed powder; adjusting laser spot, laser power and laser sintering time of a laser; irradiating or sintering by a first laser the pressed mixed powder in a crucible for a high-temperature solid-phase reaction to obtain an AB.sub.2O.sub.4 type ferrite powder; obtaining a first mixture by mixing the AB.sub.2O.sub.4 type ferrite powder and a cordierite powder in a mass ratio; adding a sintering aid and a nucleating agent for ball milling; obtaining a second mixture by mixing the first mixture and a binder for aging; pressing the second mixture; and irradiating or sintering the pressed second mixture by a second laser to obtain the infrared radiation ceramic material.
ELECTROLYTE MEMBRANE, MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL, AND METHOD FOR MANUFACTURING ELECTROLYTE MEMBRANE
The electrolyte membrane of the present disclosure includes a plurality of crystal domains. At least one of the crystal domains includes a first crystal subdomain and a second crystal subdomain. Each of the first crystal subdomain and the second crystal subdomain includes Ba, Zr, M, and O. M is a trivalent element. The concentration of M in the first crystal subdomain is different from the concentration of M in the second crystal subdomain.
Li3Mg2SbO6-BASED MICROWAVE DIELECTRIC CERAMIC MATERIAL EASY TO SINTER AND WITH HIGH Q VALUE, AND PREPARATION METHOD THEREFOR
A Li.sub.3Mg.sub.2SbO.sub.6-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling Sb.sub.2O.sub.3 and Li.sub.2CO.sub.3 according to a chemical ratio and then drying, and conducting pre-sintering to obtain a Li.sub.3SbO.sub.4 phase; and 2) mixing and ball-milling MgO, ZnO and Li.sub.3SbO.sub.4 powder according a chemical ratio of Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6 and then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.
HARD MATERIAL, SINTERED MATERIAL, TOOL INCLUDING SINTERED MATERIAL, MANUFACTURING METHOD OF HARD MATERIAL, AND MANUFACTURING METHOD OF SINTERED MATERIAL
A hard material which, when used as a material of a sintered material, makes it possible to obtain a sintered material with excellent abrasion resistance, a sintered material, a cutting tool including the sintered material, a method for manufacturing the hard material and a method for manufacturing the sintered material are provided. The hard material contains aluminum, nitrogen, and at least one element selected from the group consisting of titanium, chromium, and silicon, and has a cubic rock salt structure.
CUBIC BORON NITRIDE SINTERED MATERIAL
A cubic boron nitride sintered material includes: more than or equal to 50 volume % and less than 80 volume % of cubic boron nitride grains; and more than 20 volume % and less than or equal to 50 volume % of a binder phase, and when an oxygen content is measured in a direction perpendicular to an interface between cubic boron nitride grains using TEM-EDX, a first region having an oxygen content larger than an average value of an oxygen content of a cubic boron nitride grain exists, the interface exists in the first region, and a length of the first region along the direction perpendicular to the interface is more than or equal to 0.1 nm and less than or equal to 10 nm.
Ferrite sintered magnet
There is provided a ferrite sintered magnet having a high residual magnetic flux density. A ferrite sintered magnet 2 includes a plurality of main phase particles 5 including ferrite having a hexagonal structure, the number of core-shell structured particles 5A having a core 7 and a shell 9 covering the core 7, among the main phase particles 5, is smaller than the number of the main phase particles 5 other than the core-shell structured particles 5A.