Patent classifications
C04B35/6455
Transparent ceramics, manufacturing method thereof, and magneto-optical device
A transparent ceramic material is manufactured by molding a source powder into a compact, the source powder comprising a rare earth oxide consisting of at least 40 mol % of terbium oxide and the balance of another rare earth oxide, and a sintering aid, sintering the compact at a temperature T (1,300 C.T1,650 C.) by heating from room temperature to T1 (1200 C.T1T) at a rate of at least 100 C./h, and optionally heating from T1 at a rate of 1-95 C./h, and HIP treating the sintered compact at 1,300-1,650 C. The ceramic material has improved diffuse transmittance in the visible region and functions as a magneto-optical part in a broad visible to NIR region.
METHOD FOR PRODUCING A COMPOSITE PART CONTAINING A CERAMIC MATRIX
A process for manufacturing a composite material part including a particulate reinforcement densified by a ceramic matrix, the process including: formation of a blank of the part to be manufactured by shaping a mixture including a binder, first ceramic or carbon particles intended to form the particulate reinforcement of the part and second ceramic or carbon particles distinct from the first particles, removal or pyrolysis of the binder present in the blank to obtain a porous preform of the part to be manufactured, and infiltration of the porosity of the preform by a molten composition including a metal in order to obtain the part.
Sputtering Target And Method For Preparing Thereof
[Problem to be solved] To provide an IGZO sputtering target occurring less arcing
[Means for solving the problem] An IGZO sputtering target comprising In, Ga, Zn, and O, wherein atom ratios for In, Ga, and Zn are: 0.30In/(In+Ga+Zn)0.36, 0.30Ga/(In+Ga+Zn)0.36 and 0.30Zn/(In+Ga+Zn)0.36, wherein a relative density is at least 96%, wherein average crystal grain size in surface of the sputtering target is 30.0 m or less, and wherein difference of the grain size in surface of the sputtering target is 20% or less (1.0Dmax/Dmin1.2).
METHOD FOR PRODUCING WAVELENGTH CONVERSION SINTERED BODY
Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an -SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370 C. or more and 1,600 C. or less to obtain a first sintered body.
Oxide electrolyte sintered body and method for producing the same
An oxide electrolyte sintered body with high lithium ion conductivity and a method for producing the same, which can obtain the oxide electrolyte sintered body with high lithium ion conductivity by sintering at lower temperature than ever before. The method for producing an oxide electrolyte sintered body may comprise the steps of: preparing crystal particles of a garnet-type ion-conducting oxide which comprises Li, H, at least one kind of element L selected from the group consisting of an alkaline-earth metal and a lanthanoid element, and at least one kind of element M selected from the group consisting of a transition element that can be 6-coordinated with oxygen and typical elements belonging to the Groups 12 to 15, and which is represented by a general formula (Li.sub.x3yz,E.sub.y,H.sub.z)L.sub.M.sub.O.sub. (where E is at least one kind of element selected from the group consisting of Al, Ga, Fe and Si, 3x3yz7, 0y<0.22, 0<z2.8, 2.53.5, 1.52.5, and 1113); preparing a lithium-containing flux; and sintering a mixture of the crystal particles of the garnet-type ion-conducting oxide and the flux by heating at 400 C. or more and 650 C. or less.
Ceramic cutting tool
A ceramic cutting tool may include a blade body including zirconium oxide as a primary component of the blade body, wherein the blade body includes particles including any one of aluminum oxide, silicon carbide, or silicon nitride as a primary component of the particles, and wherein the blade body includes a blade part, a plurality of the particles are partially embedded and exposed on a top part of the blade part, and wherein the plurality of the particles cohere to each other to form a plurality of aggregates.
Mn—Zn—O sputtering target and production method therefor
Provided is a MnZnO sputtering target which can be used in DC sputtering, and a production method for the target. The MnZnO sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 110.sup.3 .Math.cm or less.
System and method for general data protection regulation (GDPR) compliant hashing in blockchain ledgers
A computer implemented system and method for providing general data protection regulation (GDPR) compliant hashing in blockchain ledgers. The invention guarantees a user's right to be forgotten, in compliance with the GDPR regulations, utilizing blockchain technologies.
MEMBER FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS WITH THE SAME AND METHOD FOR USING SINTERED BODY
A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula W.sub.xM.sub.yC.sub.z.
MEMBER FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS WITH THE SAME AND METHOD FOR USING SINTERED BODY
Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.