C04B41/4531

SLURRY INFILTRATION HEAT TREATMENT METHOD
20210155558 · 2021-05-27 ·

A method of producing a melt infiltrated ceramic matrix composite (CMC) article that includes the steps of: forming a ceramic fiber preform; optionally, rigidizing the ceramic fiber preform with a fiber interphase coating via a Chemical Vapor Infiltration (CVI) process, infiltrating a ceramic slurry into the porous body or preform, conducting one or more secondary operations, and finally, melt infiltrating the preform with molten silicon or a silicon alloy to form the CMC article. The infiltration of a ceramic slurry into a ceramic fiber preform to form a green body is performed along with the use of convection and/or conduction as heat transfer mechanisms, such that the ceramic slurry does not require the incorporation of a pre-gelation material in order for the slurry to remain within the green body during subsequent processing steps.

FABRICATION OF HIGH HEAT CAPACITY CERAMIC MATRIX COMPOSITE AIRCRAFT BRAKES USING SPARK PLASMA SINTERING

A method of fabricating a brake component made from a ceramic matrix composite is disclosed. In various embodiments, the method includes infiltrating a carbon fabric with a slurry containing a ceramic powder and a sintering aid; laying up the carbon fabric in a desired geometry to form a raw component; warm pressing the raw component to form a green component; and sintering the green component via a spark plasma sintering process to form a sintered component.

TANTALUM CARBIDE COATED CARBON MATERIAL, MANUFACTURING METHOD THEREOF, AND MEMBER FOR APPARATUS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL
20210140067 · 2021-05-13 ·

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

TANTALUM CARBIDE COATED CARBON MATERIAL, MANUFACTURING METHOD THEREOF, AND MEMBER FOR APPARATUS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL
20210140067 · 2021-05-13 ·

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

DEVICE ON CERAMIC SUBSTRATE
20210098319 · 2021-04-01 ·

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

DEVICE ON CERAMIC SUBSTRATE
20210098319 · 2021-04-01 ·

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

PARTICLE-IMBEDDED SERVING YARN FOR CMC APPLICATIONS
20230407532 · 2023-12-21 ·

A method of preparing a fibrous preform for use in a ceramic matrix composite comprises coiling a serving yarn around a ceramic tow to form a served tow, the serving yarn comprising a polymer material with embedded ceramic particles, incorporating the served tow into a woven fabric, the woven fabric comprising a plurality of served tows, and removing the polymer material of the serving yarn such that the embedded ceramic particles remain in the woven fabric.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210062336 · 2021-03-04 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210062336 · 2021-03-04 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

METHODS, MATERIALS SYSTEMS, AND DEVICES FOR INHIBITING INFILTRATION AND PENETRATION OF MOLTEN SALTS INTO SOLID MATERIALS
20210047244 · 2021-02-18 ·

Methods, materials systems, and devices for inhibiting the infiltration and penetration of molten salts into solid materials, including porous materials at temperatures above the solidus temperature of the molten salt. The methods, materials systems, and devices utilize a non-wetted solid that is introduced into pores having entrances at an exterior surface of a porous solid material adapted to contact the molten salt.