C04B41/4531

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210017092 · 2021-01-21 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210017092 · 2021-01-21 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210017029 · 2021-01-21 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20210017029 · 2021-01-21 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Carbon material having coating layer comprising tac, and method for producing said carbon material
10883170 · 2021-01-05 · ·

The present invention relates to carbon material having, on the base material, a coating layer that includes tantalum carbide (TaC), and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC having average crystal grain size of 10-50 m.

Carbon material having coating layer comprising tac, and method for producing said carbon material
10883170 · 2021-01-05 · ·

The present invention relates to carbon material having, on the base material, a coating layer that includes tantalum carbide (TaC), and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC having average crystal grain size of 10-50 m.

Method of fabricating a friction part out of composite material

A method of fabricating a friction part out of composite material, the method including densifying a carbon yarn fiber preform with a matrix including at least pyrolytic carbon and a ZrO.sub.xC.sub.y phase, where 1x2 and 0y1, the matrix being formed by film-boiling or by chemical vapor infiltration from a first precursor for pyrolytic carbon and a second precursor that includes zirconium, the second precursor being a zirconium complex including an alcoxy or carboxylate ligand bonded to zirconium.

Fibers fabricated to incorporate metals for high temperature applications

A fiber comprises a bulk material comprising one or more materials selected from the group consisting of carbon, silicon, boron, silicon carbide, and boron nitride; and a metal whose affinity for oxygen is greater than the affinity for oxygen of any of the one or more materials. The metal may be selected from the group consisting of beryllium, titanium, hafnium and zirconium. At least a first portion of the metal may be present in un-oxidized form at the entrance to and/or within grain boundaries within the fiber. A method of improving at least one of the strength, creep resistance, and toughness of a fiber comprises adding to a fiber, initially comprising a bulk material having a first affinity for oxygen, a metal that has a second affinity for oxygen higher than the first affinity. The metal may be selected from the group consisting of beryllium, titanium, hafnium and zirconium.

Fibers fabricated to incorporate metals for high temperature applications

A fiber comprises a bulk material comprising one or more materials selected from the group consisting of carbon, silicon, boron, silicon carbide, and boron nitride; and a metal whose affinity for oxygen is greater than the affinity for oxygen of any of the one or more materials. The metal may be selected from the group consisting of beryllium, titanium, hafnium and zirconium. At least a first portion of the metal may be present in un-oxidized form at the entrance to and/or within grain boundaries within the fiber. A method of improving at least one of the strength, creep resistance, and toughness of a fiber comprises adding to a fiber, initially comprising a bulk material having a first affinity for oxygen, a metal that has a second affinity for oxygen higher than the first affinity. The metal may be selected from the group consisting of beryllium, titanium, hafnium and zirconium.

PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
20200331816 · 2020-10-22 ·

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.