A method for producing a part having improved resistance to oxidation and high temperature-corrosion, includes the formation of an environmental barrier coating on an at least partially ceramic matrix composite material, the environmental barrier coating being formed by direct liquid injection-metal organic chemical vapor deposition.

The present disclosure relates to a tantalum carbide-coated carbon material and a method for manufacturing the same, and an aspect of the present disclosure provides a tantalum carbide-coated carbon material including: a carbon substrate; and a tantalum carbide coating layer formed on the carbon substrate by a CVD method, wherein microcracks included in the tantalum carbide coating layer have a maximum width of 1.5 ?m to 2.6 ?m.

The present disclosure relates to a tantalum carbide-coated carbon material and a method for manufacturing the same, and an aspect of the present disclosure provides a tantalum carbide-coated carbon material including: a carbon substrate; and a tantalum carbide coating layer formed on the carbon substrate by a CVD method, wherein microcracks included in the tantalum carbide coating layer have a maximum width of 1.5 ?m to 2.6 ?m.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

A cemented carbide comprising a predetermined hard phase, a predetermined binder phase and a predetermined composite compound phase, wherein: a content ratio of each of the hard phase, the binder phase and the composite compound phase based on total contents of the hard phase, the binder phase and the composite compound phase in the cemented carbide falls within a predetermined range; and the composite compound phase comprises an aggregate containing a small-diameter aggregate which satisfies a predetermined condition and a large-diameter aggregate which satisfies a predetermined condition.

A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600 C. to 2,500 C.

A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600 C. to 2,500 C.

A carbon fiber preform that includes a plurality of fibrous layers stacked together and a plurality of sacrificial fibers that bind the plurality of fibrous layers together, where at least one fibrous layer of the plurality of fibrous layers includes a plurality of carbon fibers or carbon fiber precursor fibers.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.