A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.

An automated preparation method of a SiC.sub.f/SiC composite flame tube, comprising the following steps: preparing an interface layer for a SiC fiber by a chemical vapor infiltration process, and obtaining the SiC fiber with a continuous interface layer; laying a unidirectional tape on the SiC fiber with the continuous interface layer and winding the SiC fiber with the continuous interface layer to form and obtaining a preform of a net size molding according to a fiber volume and a fiber orientation obtained in a simulation calculation; and adopting a reactive melt infiltration process and the chemical vapor infiltration process successively for a densification and obtaining a high-density SiC.sub.f/SiC composite flame tube in a full intelligent way. The SiC.sub.f/SiC composite flame tube prepared by the present disclosure not only has a high temperature resistance, but also has a low thermal expansion coefficient, high thermal conductivity and high thermal shock resistance.

Various embodiments of the present invention are directed towards a system and method relating to depositing vapor in a sample. For example, a device includes a vapor source chamber configured to contain a vapor source material to generate vapor. An activation chamber is configured to contain a sample. The activation chamber is in fluid communication with the vapor source chamber to receive the vapor. A permeable separator divides the vapor source chamber and the activation chamber, and isolates the sample in the activation chamber while allowing vapor to pass between the vapor source chamber and the activation chamber. The device is sealable and configured to apply vacuum to the vapor and sample, to cause deposition of the vapor into the pumice stone samples.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

Various embodiments of the present invention are directed towards a system and method relating to depositing vapor in a sample. For example, a device includes a vapor source chamber configured to contain a vapor source material to generate vapor. An activation chamber is configured to contain a sample. The activation chamber is in fluid communication with the vapor source chamber to receive the vapor. A permeable separator divides the vapor source chamber and the activation chamber, and isolates the sample in the activation chamber while allowing vapor to pass between the vapor source chamber and the activation chamber. The device is sealable and configured to apply vacuum to the vapor and sample, to cause deposition of the vapor into the pumice stone samples.