Methods for forming ceramic cores are disclosed. A ceramic core formed using the method of the present application includes a silica depletion zone encapsulating an inner zone. The inner zone includes mullite and the silica depletion zone includes alumina. The method includes heat-treating a ceramic body in a non-oxidizing atmospheric condition for an effective temperature and time combination at a pressure less than 10 atmosphere to form the silica depletion zone at a surface of the ceramic core.

Methods are disclosed for producing an organic functionalized solid inorganic substrate, a surface of the inorganic substrate comprising a hydroxide and/or an oxide comprising an element M, the element M being a metal or a metalloid. The method includes drying the surface; optionally removing protons from the surface; and contacting the surface with an organometallic reagent comprising at least one organic functional moiety, thereby obtaining the organic functionalized inorganic substrate, the at least one organic functional moiety being attached to the element M of the hydroxide and/or the oxide by means of a direct M-C bond. The drying step includes contacting the surface with a flow comprising an inert gas. The organic functionalized inorganic substrate obtained by the method may be used as a membrane, a catalyst, a sorbent, a sensor or an electronic component, or as a substrate in filtration, adsorption, chromatography and/or separation processes.

Methods are disclosed for producing an organic functionalized solid inorganic substrate, a surface of the inorganic substrate comprising a hydroxide and/or an oxide comprising an element M, the element M being a metal or a metalloid. The method includes drying the surface; optionally removing protons from the surface; and contacting the surface with an organometallic reagent comprising at least one organic functional moiety, thereby obtaining the organic functionalized inorganic substrate, the at least one organic functional moiety being attached to the element M of the hydroxide and/or the oxide by means of a direct M-C bond. The drying step includes contacting the surface with a flow comprising an inert gas. The organic functionalized inorganic substrate obtained by the method may be used as a membrane, a catalyst, a sorbent, a sensor or an electronic component, or as a substrate in filtration, adsorption, chromatography and/or separation processes.

A method may include applying a layer comprising a carbon source on a surface of a substrate including silicon; applying a layer comprising silicon on the layer comprising elemental carbon; and heat treating at least the layer comprising the carbon source to cause carbon from the layer comprising the carbon source to react with at least one of silicon from the substrate or silicon from the layer comprising silicon to form silicon carbide.

A method may include applying a layer comprising a carbon source on a surface of a substrate including silicon; applying a layer comprising silicon on the layer comprising elemental carbon; and heat treating at least the layer comprising the carbon source to cause carbon from the layer comprising the carbon source to react with at least one of silicon from the substrate or silicon from the layer comprising silicon to form silicon carbide.

The disclosure provides system, computer readable medium, and method for producing a hydroxyl radical. A plasma of a plasma gas is formed, via a controller, using a remote plasma source fluidly coupled to a gas inlet conduit coupled to a first nozzle of a processing chamber. A first gas radical is produced by flowing a first gas from a first gas source through the remote plasma source. The first gas radical is introduced into the processing chamber using the gas inlet conduit coupled to the first nozzle. A second gas from a second gas source is introduced using a plurality of second nozzles fluidly of the processing chamber. An oxidation radical is produced by mixing the first gas radical and the second gas in the processing chamber.

The present invention relates to a method of producing porous alpha-SiC containing shaped body and porous alpha-SiC containing shaped body produced by that method. The porous alpha-SiC containing shaped body shows a characteristic microstructure providing a high degree of mechanical stability.

The present invention relates to a method of producing porous alpha-SiC containing shaped body and porous alpha-SiC containing shaped body produced by that method. The porous alpha-SiC containing shaped body shows a characteristic microstructure providing a high degree of mechanical stability.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.