A solid state heater and methods of manufacturing the heater is disclosed. The heater comprises a unitary component that includes portions that are graphite and other portions that are silicon carbide. Current is conducted through the graphite portion of the unitary structure between two or more terminals. The silicon carbide does not conduct electricity, but is effective at conducting the heat throughout the unitary component. In certain embodiments, chemical vapor conversion (CVC) is used to create the solid state heater. If desired, a coating may be applied to the unitary component to protect it from a harsh environment.

Embodiments are related generally to conductive interconnects formed on substrates, and more particularly to a glass ceramic, or glass-ceramic substrate having copper interconnects disposed thereon.

Embodiments are related generally to conductive interconnects formed on substrates, and more particularly to a glass ceramic, or glass-ceramic substrate having copper interconnects disposed thereon.

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes YOF. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes YOF. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

A -SiC coating made by the method of mixing SiO.sub.2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO.sub.2 to SiO gas and reacting a carbon material, comprising stainless steel with a carbon coating, with the SiO gas at a temperature in the range of 1300 to 1600 C. resulting in a SiC coating on the stainless steel.

A -SiC coating made by the method of mixing SiO.sub.2 with carbon and heating the mixture in vacuum wherein the carbon is oxidized to CO gas and reduces the SiO.sub.2 to SiO gas and reacting a carbon material, comprising stainless steel with a carbon coating, with the SiO gas at a temperature in the range of 1300 to 1600 C. resulting in a SiC coating on the stainless steel.

In some examples, a method may include depositing, from a slurry comprising particles including silicon metal, a bond coat precursor layer including the particles comprising silicon metal directly on a ceramic matrix composite substrate. The method also may include locally heating the bond coat precursor layer to form a bond coat comprising silicon metal. Additionally, the method may include forming a protective coating on the bond coat. In some examples, an article may include a ceramic matrix composite substrate, a bond coat directly on the substrate, and a protective coating on the bond coat. The bond coat may include silicon metal and a metal comprising at least one of Zr, Y, Yb, Hf, Ti, Al, Cr, Mo, Nb, Ta, or a rare earth metal.

In some examples, a method may include depositing, from a slurry comprising particles including silicon metal, a bond coat precursor layer including the particles comprising silicon metal directly on a ceramic matrix composite substrate. The method also may include locally heating the bond coat precursor layer to form a bond coat comprising silicon metal. Additionally, the method may include forming a protective coating on the bond coat. In some examples, an article may include a ceramic matrix composite substrate, a bond coat directly on the substrate, and a protective coating on the bond coat. The bond coat may include silicon metal and a metal comprising at least one of Zr, Y, Yb, Hf, Ti, Al, Cr, Mo, Nb, Ta, or a rare earth metal.

A method of altering a surface of a ceramic matrix composite to aid in nodule removal is described. A fiber preform comprising a framework of ceramic fibers is heated to a temperature at or above a melting temperature of silicon. During the heating, the fiber preform is infiltrated with a molten material comprising silicon. After the infiltration, the fiber preform is cooled, and the infiltrated fiber preform is exposed to a gas comprising nitrogen during cooling. Silicon nitride may be formed by a reaction of free (unreacted) silicon at or near the surface of the infiltrated fiber preform with the nitrogen. Thus, a ceramic matrix composite having a surface configured for easy nodule removal is formed. Any silicon nodules formed on the surface during cooling may be removed without machining or heat treatment.