The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B.sub.4C), particularly since a wide variation in C content is possible in B.sub.4C. Graphitization of 1-3 m icosahedral B.sub.4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with 12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B.sub.4C to B.sub.2O.sub.3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B.sub.4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B.sub.4C for nanoelectronics.

The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B.sub.4C), particularly since a wide variation in C content is possible in B.sub.4C. Graphitization of 1-3 m icosahedral B.sub.4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with 12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B.sub.4C to B.sub.2O.sub.3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B.sub.4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B.sub.4C for nanoelectronics.

A superhard polycrystalline construction comprises a body of polycrystalline superhard material comprising a structure comprising superhard material, the structure having porosity greater than 20% by volume and up to around 80% by volume. A method of forming such a superhard polycrystalline construction comprises forming a skeleton structure of a first material having a plurality of voids, at least partially filling some or all of the voids with a second material to form a pre-sinter assembly, and treating the pre-sinter assembly to sinter together grains of superhard material to form a body of polycrystalline superhard material comprising a first region of superhard grains, and an interpenetrating second region; the second region being formed of the other of the first or second material that does not comprise the superhard grains; the superhard grains forming a sintered structure having a porosity greater than 20% by volume and up to around 80% by volume.

A composite material can include: a substrate of a first reaction-bonded silicon carbide (first RB-SiC) material; and a reaction-bonded diamond-retaining silicon carbide (RB-DSiC) layer bonded to a surface of the substrate. In some aspects, the RB-DSiC layer includes diamond particles bonded with a second reaction-bonded silicon carbide (second RB-SiC) material. The diamond particles may be homogeneously distributed through the second RB-SiC or only at the surface thereof. The diamond particles can be in an ordered pattern or un-ordered pattern. For example, a CMP conditioning disc can include the composite material of one of the embodiments.

A composite material can include: a substrate of a first reaction-bonded silicon carbide (first RB-SiC) material; and a reaction-bonded diamond-retaining silicon carbide (RB-DSiC) layer bonded to a surface of the substrate. In some aspects, the RB-DSiC layer includes diamond particles bonded with a second reaction-bonded silicon carbide (second RB-SiC) material. The diamond particles may be homogeneously distributed through the second RB-SiC or only at the surface thereof. The diamond particles can be in an ordered pattern or un-ordered pattern. For example, a CMP conditioning disc can include the composite material of one of the embodiments.

Polycrystalline diamond compacts (PDCs) and methods of manufacturing such PDCs. In an embodiment, the PDC includes a polycrystalline diamond (PCD) table having at least a portion of a metal-solvent catalyst removed therefrom. Removing at least a portion of a metal-solvent catalyst from the PCD table may increase the porosity of the PCD table relative to a PCD table that has not been treated to remove the metal-solvent catalyst. Likewise, removing at least a portion of a metal-solvent catalyst from the PCD table may decrease the specific magnetic saturation and increase the coercivity of the PCD table relative to a PCD table that has not been treated to remove the metal-solvent catalyst.

Polycrystalline diamond compacts (PDCs) and methods of manufacturing such PDCs. In an embodiment, the PDC includes a polycrystalline diamond (PCD) table having at least a portion of a metal-solvent catalyst removed therefrom. Removing at least a portion of a metal-solvent catalyst from the PCD table may increase the porosity of the PCD table relative to a PCD table that has not been treated to remove the metal-solvent catalyst. Likewise, removing at least a portion of a metal-solvent catalyst from the PCD table may decrease the specific magnetic saturation and increase the coercivity of the PCD table relative to a PCD table that has not been treated to remove the metal-solvent catalyst.

A cutting element may include a substrate; and an ultrahard layer on the substrate, the substrate and the ultrahard layer defining a non-planar working surface of the cutting element such that the ultrahard layer forms a cutting portion and the substrate is at least laterally adjacent to the ultrahard layer. Another cutting element includes a pointed region having a side surface extending from the pointed region outer perimeter to a peak. An ultrahard material body forms a portion of the pointed region including the peak, and a base region extends a depth from the pointed region outer perimeter. The ultrahard material body has a height to width aspect ratio with the height and width measured between two points of the body having the greatest distance apart along a dimension parallel with a longitudinal axis (i.e., height) along a dimension perpendicular to the longitudinal axis (i.e., width).

A cutting element may include a substrate; and an ultrahard layer on the substrate, the substrate and the ultrahard layer defining a non-planar working surface of the cutting element such that the ultrahard layer forms a cutting portion and the substrate is at least laterally adjacent to the ultrahard layer. Another cutting element includes a pointed region having a side surface extending from the pointed region outer perimeter to a peak. An ultrahard material body forms a portion of the pointed region including the peak, and a base region extends a depth from the pointed region outer perimeter. The ultrahard material body has a height to width aspect ratio with the height and width measured between two points of the body having the greatest distance apart along a dimension parallel with a longitudinal axis (i.e., height) along a dimension perpendicular to the longitudinal axis (i.e., width).

A method to apply nano-crystalline diamond onto a selected substrate, including preparing Nanodiamond slurry of Nanodiamond particles dispersed in a medium. The medium may include a liquid or a sol-gel. The selected substrate is immersed in the Nanodiamond slurry for a predetermined period of time. Then the substrate is removed from the slurry. The substrate is then dried with a flow of inert gas. The substrate is left coated with a coating of the nanodiamond particles that are highly adherently held by van der Waals forces.