C04B41/5055

Film-forming material and film
11414325 · 2022-08-16 · ·

A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm.sup.3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×10.sup.2 Pa.Math.m.sup.1/2 or higher.

Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes Y—O—F. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes Y—O—F. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

Film-Forming Material And Film
20220089451 · 2022-03-24 ·

A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm.sup.3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×10.sup.2 Pa.Math.m.sup.1/2 or higher.

Film-Forming Material And Film
20220089451 · 2022-03-24 ·

A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm.sup.3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×10.sup.2 Pa.Math.m.sup.1/2 or higher.

PLASMA PROCESSING DEVICE MEMBER AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
20210118686 · 2021-04-22 ·

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

PLASMA PROCESSING DEVICE MEMBER AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
20210118686 · 2021-04-22 ·

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

MEMBER, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MANUFACTURING APPARATUS

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes YOF. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

MEMBER, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MANUFACTURING APPARATUS

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes YOF. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

PLASMA PROCESSING DEVICE MEMBER, PLASMA PROCESSING DEVICE COMPRISING SAID PLASMA PROCESSING DEVICE MEMBER, AND METHOD FOR MANUFACTURING PLASMA PROCESSING DEVICE MEMBER
20210020415 · 2021-01-21 ·

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 m or less.