Methods comprise performing two or more thermal cycles on an article comprising a body and a ceramic coating. Each thermal cycle of the two or more thermal cycles comprise heating the ceramic article to a target temperature at a first ramping rate. Each thermal cycle further comprises maintaining the article at the target temperature for a first duration of time and then cooling the article to a second target temperature at a second ramping rate. The method further comprises submerging the article in a bath for a second duration of time to remove the particles from the ceramic coating.

Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

Described herein are components of a semiconductor processing apparatus, where at least one surface of the component is resistant to a halogen-containing reactive plasma. The component includes a solid structure having a composition containing crystal grains of yttrium oxide, yttrium fluoride or yttrium oxyfluoride and at least one additional compound selected from an oxide, fluoride, or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, hafnium, and combinations thereof.

A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2=24.3 by X-ray diffraction as , and taking a peak intensity detected near diffraction angle 2=25.7 as , a peak intensity ratio / of the structure is not less than 0% and less than 100%.

A structure includes a polycrystalline substance of yttrium fluoride, wherein an average crystallite size in the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2=24.3 by X-ray diffraction as , and taking a peak intensity detected near diffraction angle 2=25.7 as , a peak intensity ratio / of the structure is not less than 0% and less than 100%.

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal base, or an oxyfluoride amorphous phase, or a combination of those materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal base, or an oxyfluoride amorphous phase, or a combination of those materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

According to one embodiment, a structure includes a polycrystalline substance of yttrium oxyfluoride as a main component. The yttrium oxyfluoride has an orthorhombic crystal structure, and an average crystallite size of the polycrystalline substance is less than 100 nanometers. When taking a peak intensity detected near diffraction angle 2=32.0 by X-ray diffraction as , and taking a peak intensity detected near diffraction angle 2=32.8 as , a peak intensity ratio / is not less than 0% and not more than 150%.