Cutting elements include a carbonate diamond-bonded body that is sintered under HPHT conditions in the presence of a carbonate material, where the body includes a matrix phase of intercrystalline bonded diamond with interstitial regions including the carbonate material, where the diamond-bonded body is sintered without a substrate. A matrix casting is formed and mechanically coupled to the body after the body is sintered, and a portion of the body surface is exposed along a surface of the matrix casting. The exposed body surface is thereafter intentionally treated to induce a compressive residual surface stress that is greater than a remaining portion of the body. The compressive residual surface stress is less than about 500 MPa, and from about 100 to 500 MPa, and a remaining region the body may have a residual stress of less than about 300 MPa, and less than about 100 MPa.

A heat-resistant member includes a base member composed of an isotropic graphite and a film with a single layer or multiple layers formed on the entire or partial surface of the base member. The film includes a dense WC layer with a single layer or multiple layers, and the dense WC layer includes WC as a main component and has a porosity of less than 3%. The film may further include a porous WC layer with a single layer or multiple layers formed on an entire or partial surface of the dense WC layer. In this case, the porous WC layer preferably includes WC as a main component and has a porosity larger than that of the dense WC layer.

A heat-resistant member includes a base member composed of an isotropic graphite and a film with a single layer or multiple layers formed on the entire or partial surface of the base member. The film includes a dense WC layer with a single layer or multiple layers, and the dense WC layer includes WC as a main component and has a porosity of less than 3%. The film may further include a porous WC layer with a single layer or multiple layers formed on an entire or partial surface of the dense WC layer. In this case, the porous WC layer preferably includes WC as a main component and has a porosity larger than that of the dense WC layer.

Disclosed is a multi-phase abradable coating including a ceramic matrix and a dislocator phase.

Disclosed is a multi-phase abradable coating including a ceramic matrix and a dislocator phase.

A heat-resistant member includes a base member composed of an isotropic graphite and a film with a single layer or multiple layers formed on the entire or partial surface of the base member. The film includes a dense WC layer with a single layer or multiple layers, and the dense WC layer includes WC as a main component and has a porosity of less than 3%. The film may further include a porous WC layer with a single layer or multiple layers formed on an entire or partial surface of the dense WC layer. In this case, the porous WC layer preferably includes WC as a main component and has a porosity larger than that of the dense WC layer.

A heat-resistant member includes a base member composed of an isotropic graphite and a film with a single layer or multiple layers formed on the entire or partial surface of the base member. The film includes a dense WC layer with a single layer or multiple layers, and the dense WC layer includes WC as a main component and has a porosity of less than 3%. The film may further include a porous WC layer with a single layer or multiple layers formed on an entire or partial surface of the dense WC layer. In this case, the porous WC layer preferably includes WC as a main component and has a porosity larger than that of the dense WC layer.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Coated components, along with methods of their formation, are provided. The coated component includes a ceramic substrate having a surface; an intermediate layer on the surface of the ceramic substrate; and an environmental barrier coating on the intermediate layer. The intermediate layer includes a carbon-sink material that inhibits accumulation of free carbon from a carbon-containing species within the intermediate layer, the ceramic substrate, or both.