A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 m or less.

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 m or less.

An article for use in a high-temperature environment that includes a substrate including a superalloy material, a ceramic, or a ceramic matrix composite, and an abradable coating on the substrate, the abradable coating including a rare earth silicate and a dislocator phase, the dislocator phase forms one or more distinct phase regions in the abradable coating and comprises at least one of hafnium diboride (HfB.sub.2), zirconium diboride (ZrB.sub.2), tantalum nitride (TaN or Ta.sub.2N), tantalum carbide (Ta.sub.2C), titanium diboride (TiB.sub.2), zirconium carbide (ZrC), hafnium carbide (HfC), tantalum diboride (TaB.sub.2), hafnium nitride (HfN), or niobium carbide (NbC).

An article for use in a high-temperature environment that includes a substrate including a superalloy material, a ceramic, or a ceramic matrix composite, and an abradable coating on the substrate, the abradable coating including a rare earth silicate and a dislocator phase, the dislocator phase forms one or more distinct phase regions in the abradable coating and comprises at least one of hafnium diboride (HfB.sub.2), zirconium diboride (ZrB.sub.2), tantalum nitride (TaN or Ta.sub.2N), tantalum carbide (Ta.sub.2C), titanium diboride (TiB.sub.2), zirconium carbide (ZrC), hafnium carbide (HfC), tantalum diboride (TaB.sub.2), hafnium nitride (HfN), or niobium carbide (NbC).

Ground surface comprising a substrate (110) having a Young's modulus of between 100 and 1000 GPa, and in which the ground surface has, on a working surface (120), a Vickers hardness of between 1300 and 10 000 kgf/mm.sup.2, and/or a surface coating forming the working surface, in which the surface coating contains amorphous carbon and/or titanium nitride and/or chromium nitride and/or tungsten carbide.

Disclosed are coatings made of inorganic materials on molds for glass molding, particularly, a graded coating of element diffusion inhibition and adhesion resistance on molds for glass molding. The graded coating includes a Cr adhesion layer which is bonded with a substrate, a CrN intermediate layer and a Cr.sub.xW.sub.yN.sub.(1-x-y) surface layer, where 0.15<x<0.4, and 0.2y<0.45. The graded coating has excellent crack growth suppression and adhesion resistance.

A resistance temperature detector (RTD) that uses a ceramic matrix composite (CMC), such as a silicon carbide fiber-reinforced silicon carbide matrix, as an active temperature sensing element, which can operate at temperatures greater than 1000 C. or even 1600 C. Conductive indium tin oxide or a single elemental metal such as platinum is deposited on a dielectric or insulating layer such as mullite or an environmental barrier coating (EBC) on the substrate. Openings in the layer allow etching of the CMC surface in order to make high quality ohmic contacts with the conductive material, either directly or through a silicide diffusion barrier such as ITO. The RTD can measure both temperature and strain of the CMC. The use of an EBC, which typically is deposited on the CMC by the manufacturer, as the insulating or dielectric layer can be extended to other devices such as strain gages and thermocouples that use the CMC as a sensing element. The EBC can be masked and etched to form the openings. A conductive EBC can be used as the silicide diffusion barrier.

Advanced ultra high temperature ceramic (UHTC) systems with higher temperature capabilities, particularly an integrated ceramic coating and ceramic matrix composite (ICC-CMC). Also disclosed are coating and/or ceramic matrix composites and architecture arrangements to achieve ultra-high temperature and heat flux capability, resistance to oxidation, combustion, and a wide range of spectrum wavelength and charged particle radiation environments.

Advanced ultra high temperature ceramic (UHTC) systems with higher temperature capabilities, particularly an integrated ceramic coating and ceramic matrix composite (ICC-CMC). Also disclosed are coating and/or ceramic matrix composites and architecture arrangements to achieve ultra-high temperature and heat flux capability, resistance to oxidation, combustion, and a wide range of spectrum wavelength and charged particle radiation environments.

The invention relates to SiC ceramic matrix composite (CMC) claddings with metallic, ceramic and/or multilayer coatings applied on the outer surface for improved corrosion resistance and hermeticity protection. The coating includes one or more materials selected from FeCrAl, Y, Zr and AlCr alloys, Cr.sub.2O.sub.3, ZrO.sub.2 and other oxides, chromium carbides, CrN, Zr- and Y-silicates and silicides. The coatings are applied employing a variety of known surface treatment technologies including cold spray, thermal spray process, physical vapor deposition process (PVD), and slurry coating.