Coated components and their methods of formation are provided. The coated component includes: a ceramic matrix composite substrate comprising silicon carbide and having a surface; a bond coat on the surface of the substrate; and an environmental barrier coating on the bond coat. The bond coat includes a plurality of discrete particles dispersed within a matrix phase that includes mullite. The plurality of discrete particles includes an oxygen getter and a transition metal oxide.

Coated components and their methods of formation are provided. The coated component includes: a ceramic matrix composite substrate comprising silicon carbide and having a surface; a bond coat on the surface of the substrate; and an environmental barrier coating on the bond coat. The bond coat includes a plurality of discrete particles dispersed within a matrix phase that includes mullite. The plurality of discrete particles includes an oxygen getter and a transition metal oxide.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method of manufacturing a Si-SiC-based composite structure capable of manufacturing a Si-SiC-based composite structure having a desired shape while suppressing the deformation of a molded body. The method of manufacturing a Si-SiC-based composite structure includes a step of impregnating a molten metal containing Si into a molded body containing SiC by heating a supply body containing Si under a state in which the molded body is in contact with a deformation suppressing member configured to suppress deformation of the molded body and in which the supply body is in contact with the molded body.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

The disclosure describes articles having coating systems configured to inhibit or prevent crystallization of TGO at the operating temperature of the article. An article includes a substrate defining a surface; a bond coat on the surface of the substrate; a coating layer that includes a boron dopant configured to inhibit crystallization of amorphous silicon dioxide thermally grown oxide on the bond coat at an operating temperature of the article. By inhibiting or preventing TGO crystallization, the described coating systems may increase a useable life of the component.

The disclosure describes articles having coating systems configured to inhibit or prevent crystallization of TGO at the operating temperature of the article. An article includes a substrate defining a surface; a bond coat on the surface of the substrate; a coating layer that includes a boron dopant configured to inhibit crystallization of amorphous silicon dioxide thermally grown oxide on the bond coat at an operating temperature of the article. By inhibiting or preventing TGO crystallization, the described coating systems may increase a useable life of the component.

Disclosed is a method for making a ceramic matrix composite. The method includes infiltrating an initial ceramic matrix composite with a molten silicon infiltration material to form a silicon infiltrated composite; cooling the silicon infiltrated composite; heating a first portion of the cooled silicon infiltrated composite to a temperature in excess of the melt temperature of the silicon infiltration material in the presence of a carbon source; heating a second portion of the cooled silicon infiltrated composite to a temperature in excess of the melt temperature of the silicon infiltration material in the presence of a carbon source after heating the first portion; and cooling the heated portions to form a final ceramic matrix composite, wherein the first portion and second portion of the cooled silicon infiltrated composite are adjacent or overlap.