A multi-layer ceramic capacitor is disclosed. In an embodiment the dielectric composition includes a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is no greater than 0.8 times the mean Bi concentration in the dielectric composition as a whole.

A dielectric composition, a dielectric element, an electronic component and a laminated electric component are disclosed. In an embodiment a dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a high-Bi phase in which the Bi concentration is at least 1.2 times the mean Bi concentration in the dielectric composition as a whole.

A dielectric composition, a dielectric element, an electronic component and a multi-layer electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion and wherein the content of Bi present in the core portion is at least 1.2 times the content of Bi present in the shell portion.

A method for producing a piezoelectric component is disclosed. In an embodiment, the method includes producing a ceramic precursor material of the general formula Pb.sub.1-x-y-(2a-b)/2V.sub.(2a-b)/2Ba.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where RE is a rare earth metal and V is a Pb vacancy, mixing the ceramic precursor material with a sintering aid, forming a stack which includes alternating layers including the ceramic precursor material and a layer including Cu and debindering and sintering the stack thereby forming the piezoelectric component having Cu electrodes and at least one piezoelectric ceramic layer including Pb.sub.1-x-y-[(2a-b)/2]-p/2V.sub.[(2a-b)/2-p/2]Cu.sub.pBa.sub.xSr.sub.y[(Ti.sub.zZr.sub.1-z).sub.1-a-bW.sub.aRE.sub.b]O.sub.3, where 0x0.035, 0y0.025, 0.42z0.5, 0.0045a0.009, 0.009b0.011, and 2a>b, p2ab.

The present invention discloses potassium sodium bismuth niobate tantalate zirconate ferrite ceramics with non-stoichiometric Nb.sup.5+ and a preparation method therefor. A ceramic powder with a general formula of (K.sub.0.45936Na.sub.0.51764Bi.sub.0.023)(Nb.sub.0.89958+0.957xTa.sub.0.05742Zr.sub.0.04Fe.sub.0.003)O.sub.3 (?0.01?x?0.04) is prepared by a traditional solid phase method; and then piezoelectric ceramics are prepared by traditional electronic ceramic preparation processes such as granulating, molding, binder removal, sintering and silvering test. An excessive amount of Nb.sup.5+ doping improves the temperature stability of the ceramics by providing a domain wall pinning effect. This result demonstrates the promise of potassium sodium bismuth niobate tantalate zirconate ferrite ceramics for a wide range of applications, including sensors, actuators, and other electronic devices.

The present invention discloses potassium sodium bismuth niobate tantalate zirconate ferrite ceramics with non-stoichiometric Nb.sup.5+ and a preparation method therefor. A ceramic powder with a general formula of (K.sub.0.45936Na.sub.0.51764Bi.sub.0.023)(Nb.sub.0.89958+0.957xTa.sub.0.05742Zr.sub.0.04Fe.sub.0.003)O.sub.3 (?0.01?x?0.04) is prepared by a traditional solid phase method; and then piezoelectric ceramics are prepared by traditional electronic ceramic preparation processes such as granulating, molding, binder removal, sintering and silvering test. An excessive amount of Nb.sup.5+ doping improves the temperature stability of the ceramics by providing a domain wall pinning effect. This result demonstrates the promise of potassium sodium bismuth niobate tantalate zirconate ferrite ceramics for a wide range of applications, including sensors, actuators, and other electronic devices.

A method for depositing a decorative and/or functional layer on at least a portion of a surface of a finished or semi-finished article made of a non-conductive ceramic material, this deposition method includes the following operations: subjecting the at least a portion of the surface of the article to a carburising or nitriding treatment during which carbon, respectively nitrogen atoms, diffuse in the at least a portion of the surface of the article, then depositing, by galvanic growth of a metallic material, the decorative and/or functional layer on at least a portion of the surface of the article which has undergone the carburising or nitriding treatment.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion, and wherein the content of Bi present in the core portion is no greater than 0.83 times the content of Bi present in the shell portion.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes a perovskite compound comprising a main component having Bi, Na, Sr, Ln and Ti, wherein Ln is at least one type of a rare earth element, and wherein a mean crystal grain size is between 0.1 m and 1 m.

A method for producing metal coatings on ceramic substrates for establishing electrical contact, and ceramic substrates having metal coatings. More particularly, the invention relates to the production of weldable and solderable metal coatings on ceramic substrates.