The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point: a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein hearing is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point: a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein hearing is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

The present invention relates to a metalized ceramic substrate and a method for manufacturing the same. The method for manufacturing a metalized ceramic substrate of the present invention comprises the steps of: mixing copper powder and metal oxide to manufacture a copper paste; applying the copper paste to an upper surface of a ceramic substrate; and sintering the copper paste to form a copper metallization layer on the upper surface of the ceramic substrate. According to the present invention, it is possible to form, on the ceramic substrate, a thin copper metallization layer with high density, high bonding strength and low impurities.

The present invention relates to a metalized ceramic substrate and a method for manufacturing the same. The method for manufacturing a metalized ceramic substrate of the present invention comprises the steps of: mixing copper powder and metal oxide to manufacture a copper paste; applying the copper paste to an upper surface of a ceramic substrate; and sintering the copper paste to form a copper metallization layer on the upper surface of the ceramic substrate. According to the present invention, it is possible to form, on the ceramic substrate, a thin copper metallization layer with high density, high bonding strength and low impurities.

Embodiments are related generally to conductive interconnects formed on substrates, and more particularly to a glass ceramic, or glass-ceramic substrate having copper interconnects disposed thereon.

Embodiments are related generally to conductive interconnects formed on substrates, and more particularly to a glass ceramic, or glass-ceramic substrate having copper interconnects disposed thereon.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

In a method of making a gaseous emissions treatment component, a green ceramic mix is extruded through a die to form an extrusion having cells extending along the extrusion, the cells being bounded by walls dividing adjacent cells from one another. In concert with the extruding, metal is fed through the die with the extruded mix. A length of the extrusion and associated metal is then cut off and fired to form the component.

In a method of making a gaseous emissions treatment component, a green ceramic mix is extruded through a die to form an extrusion having cells extending along the extrusion, the cells being bounded by walls dividing adjacent cells from one another. In concert with the extruding, metal is fed through the die with the extruded mix. A length of the extrusion and associated metal is then cut off and fired to form the component.