Methods for producing components for use in high temperature systems that include reacting a fluid reactant and a porous preform that has a pore volume and contains a solid oxide reactant that defines a solid volume of the porous preform. The method includes infiltrating the fluid reactant into the porous preform to react with the solid oxide reactant to produce a oxide/metal composite component, during which a displacing metal replaces a displaceable species of the solid oxide reactant to produce at least one solid oxide reaction product that has a reaction product volume that at least partially fills the pore volume. The oxide/metal composite component includes at least one oxide phase and at least one metal phase. The component is exposed to temperatures greater than 500° C. and the at least one oxide phase and the at least one metal phase exhibit thermal expansion values within 50% of one another.

Methods for producing components for use in high temperature systems that include reacting a fluid reactant and a porous preform that has a pore volume and contains a solid oxide reactant that defines a solid volume of the porous preform. The method includes infiltrating the fluid reactant into the porous preform to react with the solid oxide reactant to produce a oxide/metal composite component, during which a displacing metal replaces a displaceable species of the solid oxide reactant to produce at least one solid oxide reaction product that has a reaction product volume that at least partially fills the pore volume. The oxide/metal composite component includes at least one oxide phase and at least one metal phase. The component is exposed to temperatures greater than 500° C. and the at least one oxide phase and the at least one metal phase exhibit thermal expansion values within 50% of one another.

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

A ceramics substrate includes: a substrate body; and an electric conductor patient that is provided in the substrate body. The substrate body is made of ceramics containing aluminum oxide. The electric conductor pattern is a sintered body that contains tungsten as a main component and further contains nickel oxide, aluminum oxide and silicon dioxide.

A ceramics substrate includes: a substrate body; and an electric conductor patient that is provided in the substrate body. The substrate body is made of ceramics containing aluminum oxide. The electric conductor pattern is a sintered body that contains tungsten as a main component and further contains nickel oxide, aluminum oxide and silicon dioxide.

A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.

A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.