A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

A method for forming a high temperature coating includes applying carbon powder to a surface of a carbon/carbon (C/C) composite substrate to force the carbon powder into one or more surface voids of the surface of the C/C composite substrate. The carbon powder has a substantially same composition and morphology as a surface portion of the C/C composite substrate. The method includes applying a metal slurry to the surface of the C/C composite substrate following the application of the carbon powder and reacting a metal of the metal slurry with carbon of the carbon powder and carbon of the surface portion of the C/C composite substrate to form a metal-rich antioxidant layer of a metal carbide on the C/C composite substrate.

A method for forming a high temperature coating includes applying carbon powder to a surface of a carbon/carbon (C/C) composite substrate to force the carbon powder into one or more surface voids of the surface of the C/C composite substrate. The carbon powder has a substantially same composition and morphology as a surface portion of the C/C composite substrate. The method includes applying a metal slurry to the surface of the C/C composite substrate following the application of the carbon powder and reacting a metal of the metal slurry with carbon of the carbon powder and carbon of the surface portion of the C/C composite substrate to form a metal-rich antioxidant layer of a metal carbide on the C/C composite substrate.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10.sup.−1 Ω.Math.cm to 20 Ω.Math.cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10.sup.−1 Ω.Math.cm to 20 Ω.Math.cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.

Methods for forming a coating on a surface of a substrate are provided. The method can include: preheating the surface of the substrate; spraying a slurry suspension onto the surface of the substrate to form a coating, wherein the slurry composition comprises a rare earth compound, a sintering agent, and a solvent, wherein the rare earth compound has the formula: A.sub.1-bB.sub.bZ.sub.1-dD.sub.dMO.sub.6 where A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; b is 0 to 0.5; Z is Hf, Ti, or a mixture thereof; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to 0.5; and M is Ta, Nb, or a mixture thereof; and thereafter, heat treating the coating to densify the coating from an initial porosity to a sintered porosity.

Methods for forming a coating on a surface of a substrate are provided. The method can include: preheating the surface of the substrate; spraying a slurry suspension onto the surface of the substrate to form a coating, wherein the slurry composition comprises a rare earth compound, a sintering agent, and a solvent, wherein the rare earth compound has the formula: A.sub.1-bB.sub.bZ.sub.1-dD.sub.dMO.sub.6 where A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; b is 0 to 0.5; Z is Hf, Ti, or a mixture thereof; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to 0.5; and M is Ta, Nb, or a mixture thereof; and thereafter, heat treating the coating to densify the coating from an initial porosity to a sintered porosity.

An article may include a substrate, such as a silicon-containing ceramic matrix composite, an environmental barrier coating (EBC) layer on the substrate, and a CMAS-resistant EBC layer on the EBC layer. The EBC layer may include at least one rare-earth disilicate (REDS). The CMAS-resistant EBC layer may include at least one rare-earth monosilicate (REMS) configured to react with CMAS to form crystalline reaction products. The CMAS-resistant EBC layer may include a plurality of vertical cracks extending from a surface of the CMAS-resistant EBC layer at least partially into the CMAS-resistant EBC layer. Additionally, or alternatively, the EBC layer may include a plurality of vertical cracks extending from a surface of the EBC layer into at least a portion of the EBC layer.