A cubic boron nitride sintered material includes: 0 to 85 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 μm, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 μm, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.

According to the present invention, there are provided a composite body that enables the formation of a lithium ion conductor that exhibits good lithium ion conductivity by a pressurization treatment without sintering at a high temperature (about 1,000° C.) while using a lithium-containing oxide having excellent safety and stability, as well as a lithium ion conductor, an all-solid state lithium ion secondary battery, an electrode sheet for an all-solid state lithium ion secondary battery, and lithium tetraborate. The composite body according to the embodiment of the present invention contains a lithium compound having a lithium ion conductivity of 1.0×10.sup.−6 S/cm or more at 25° C. and lithium tetraborate that satisfies the following requirement 1.

The requirement 1: In a reduced two-body distribution function G(r) obtained from an X-ray total scattering measurement of the lithium tetraborate, a first peak in which a peak top is located in a range where r is 1.43±0.2 Å and a second peak in which a peak top is located in a range where r is 2.40±0.2 Å are present, G(r) of the peak top of the first peak and G(r) of the peak top of the second peak indicate more than 1.0, and an absolute value of G(r) is less than 1.0 in a range where r is more than 5 Å and 10 Å or less.

A method of preparing a woven ceramic fabric for use in a ceramic matrix composite includes transforming a woven fabric sheet having a first tow architecture into a separated woven fabric sheet having a second tow architecture, the first tow architecture including a plurality of warp tows and a plurality of weft tows, and the second tow architecture including a plurality of warp subtows and/or a plurality of weft subtows. Transforming the woven fabric sheet includes separating at least some of the plurality of warp tows and/or the plurality of weft tows into a greater number of corresponding warp subtows and/or weft subtows, respectively, such that second tow architecture includes more warp subtows and/or weft subtows than the first tow architecture comprises warp tows and weft tows, and wherein each of the warp subtows and/or weft subtows includes fewer filaments than corresponding warp tow and/or weft tow. Each of the plurality of warp subtows and/or weft subtows is spaced apart from the closest adjacent warp subtow and/or weft subtow, respectively, a distance of 25 to 230 microns.

A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al.sub.2.81O.sub.3.56N.sub.0.44, AlON) constituent, (c) an alpha-alumina (α-Al.sub.2O.sub.3) constituent, (d) a yttrium alumina garnet (Y.sub.3Al.sub.5O.sub.12, YAG) constituent, (e) a yttrium alumina monoclinic (Y.sub.4Al.sub.2O.sub.9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO.sub.3, YAP) constituent, and (g) a yttrium oxide (Y.sub.2O.sub.3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

A process for the manufacture of inorganic fibres comprises: (a) selecting a composition and proportion of: (i) silica sand; (ii) lime comprising at least 0.10 wt % magnesia; and (iii) optional additives comprising a source of oxides or non-oxides of one or more of the lanthanides series of elements, or combinations thereof; (b) mixing the silica sand; lime; and optional additives to form a mixture; (c) melting the mixture in a furnace; and (d) shaping the molten mixture into inorganic fibres. The raw materials selection comprises composition selection and proportion selection of the raw materials to obtain an inorganic fibre composition comprising a range of from 61.0 wt % and 70.8 wt % silica; less than 2.0 wt % magnesia; less than 2.0% incidental impurities; and no more than 2.0 wt % of metal oxides and/or metal non-oxides derived from said optional additives; with calcia providing the balance up to 100 wt %; and wherein the inorganic fibre composition comprises no more than 0.80 wt % Al.sub.2O.sub.3 derived from the incidental impurities and/or the optional additives.

The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than the silicon content, in terms of oxide, of the interior of the bonding layer.

A cubic boron nitride sintered material tool contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase, and a hexagonal boron nitride phase. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of hBN in the hexagonal boron nitride phase and an intensity of a σ* peak derived from a σ bond of hBN in the hexagonal boron nitride phase and a σ bond of cBN in the cubic boron nitride phase is determined by measuring an energy loss associated with excitation of K-shell electrons of boron, the ratio I.sub.π*/I.sub.σ* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I.sub.π*/I.sub.σ* of the cBN grain at a depth position of 5 μm from the surface of the cutting edge is 0.001 to 0.1.

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer includes a glass former.

A pore-free ceramic is provided that has a high modulus of elasticity and a low coefficient of thermal expansion. A process for producing a corresponding ceramic is also provided. The pore free ceramic is a dimensionally stable substrate material in applications subjected to temperature gradients including semiconductor manufacture.

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.