A ceramic powder material containing: a first garnet-type compound containing Li, La, and Zr; and a second garnet-type compound containing Li, La, and Zr and having a composition different from a composition of the first garnet-type compound, in which the first garnet-type compound and the second garnet-type compound are represented by Formula [1] Li.sub.7-(3x+y)M1.sub.xLa.sub.3Zr.sub.2-yM2.sub.yO.sub.12, where Ml is Al or Ga, M2 is Nb or Ta, the first garnet-type compound satisfies 0≤(3x+y)≤0.5, and the second garnet-type compound satisfies 0.5<(3x+y)≤1.5.

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a composite structure. The composite structure includes a base material and a ceramic layer. The ceramic layer includes a first part located on a surface of the base material and is exposed. The composite structure includes a through-hole extending through the base material and the ceramic layer. The through-hole extends in a first direction. The through-hole includes a first hole region, a second hole region and a third hole region. The first hole region is continuous with a surface of the first part. The third hole region is positioned between the first hole region and the second hole region in the first direction. A hardness of the third hole region is greater than a hardness of the first hole region.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer has a perovskite structure represented by a general formula ABO.sub.3 as a main phase, and includes a region in which Dy is dissolved. In the region in which Dy is dissolved, an atomic ratio of a content of Dy dissolved in an A-site of the perovskite structure to a content of Dy dissolved in a B-site is 1.6 or more and 2.0 or less.

Provided is a dielectric composition containing: a main component expressed by {Ba.sub.xSr.sub.(1-x)}.sub.mTa.sub.4O.sub.12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO.sub.2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer has a perovskite structure represented by a general formula ABO.sub.3 as a main phase, and includes a region in which Dy is solid solubilized. In the region in which the Dy is solid solubilized, an X-ray count of Dy solid-solubilized in an A-site of the perovskite structure measured by using Scanning Transmission Electron Microscopy-Energy Dispersive X-ray Spectroscopy (STEM-EDS) is AD, an X-ray count of Dy solid-solubilized in a B-site of the perovskite structure is BD, and an average value of AD/BD is 1.6 or more and 2.0 or less.

A hard lead zirconate titanate (PZT) ceramic has an ABO.sub.3 structure with A sites and B sites. The PZT ceramic is doped with Mn and with Nb on the B sites and the ratio Nb/Mn is <2. A piezoelectric multilayer component having such a PZT ceramic and also a method for producing a piezoelectric multilayer component are also disclosed.

A lead-free piezoelectric ceramic sensor material and a preparation method thereof, and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an oxidation bait, a bismuth oxide, a composite binder and a dispersant agent. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability. And the piezoelectric sensor made of the lead-free piezoelectric ceramic sensor material has a high sensitivity, a strong working stability, an excellent piezoelectric and has a high Curie temperature.

A superconducting composition of matter including overlapping first and second regions. The regions comprise unit cells of a solid, the first region comprises an electrical insulator or semiconductor, and the second region comprises a metallic electrical conductor. The second region extends through the solid and a subset of said second region comprise surface metal unit cells that are adjacent to at least one unit cell from the first region. The ratio of the number of said surface metal unit cells to the total number of unit cells in the second region being at least 20 percent.

Thermal barrier coatings consist of a tantala-zirconia mixture that is stabilized with two or more stabilizers. An exemplary thermal barrier coating consists of, by mole percent: about 8% to about 30% YO.sub.1.5; about 8% to about 30% YbO.sub.1.5 or GdO.sub.1.5 or combination thereof; about 8% to about 30% TaO.sub.2.5; about 0% to about 10% HfO.sub.2; and a balance of ZrO.sub.2.

A dielectric composition includes a main ingredient having a perovskite structure represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca and B is at least one of Ti, Zr, and Hf, and a first accessory ingredient. The first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of Nb, and 0.25 mole or more and 0.9 mole or less of Mg, a sum of contents of the rare earth element and Nb is 1.5 mole or less.