A method of making abrasive particles includes: providing a slurry comprising non-colloidal solid particles and a liquid vehicle; forming at least a portion of the slurry into shaped bodies contacting a substrate; at least partially drying the shaped bodies to provide shaped abrasive precursor particles; separating at least a portion of the shaped abrasive precursor particles from the substrate; and converting at least a portion of the shaped abrasive precursor particles into shaped abrasive particles. The shaped abrasive particles comprise alpha alumina having an average crystal grain size of 0.8 to 8 microns and an apparent density that is at least 92 percent of the true density. Each shaped abrasive particle has a respective surface comprising a plurality of smooth sides that form at least four vertexes. Shaped abrasive particles, abrasive articles including them, and methods of using are also disclosed.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 μm per cross-sectional area of 76 μm.sup.2 is N, N is 7 or less.

A phosphor plate including: a complex containing an α-sialon phosphor and a sintered body containing spinel represented by a general formula M.sub.2xAl.sub.4-4xO.sub.6-4x (where M represents at least one of Mg, Mn, and Zn, and 0.2<x<0.6). In addition, there is provided a light emitting device including: a group III nitride semiconductor light emitting element; and the phosphor plate provided on one surface of the group III nitride semiconductor light emitting element. Further, there is provided a method for manufacturing the phosphor plate.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The first segregations each include Ba, Ti, Si, Ni, and O.

A ceramic electronic device includes a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, a main component of the plurality of dielectric layers being a ceramic having a perovskite structure expressed by a general formula ABO.sub.3. At least one of crystal grains of the plurality of dielectric layers has a core-shell structure. A dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a shell of the core-shell structure is larger than a dispersion of atomic displacement amounts between B site atoms and oxygen atoms of a core of the core-shell structure.

The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.

A zirconia powder in which when a stabilizer is Y.sub.2O.sub.3, a content thereof is 1.4 mol % or more and less than 2.0 mol %; when the stabilizer is Er.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; when the stabilizer is Yb.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; and when the stabilizer is CaO, a content thereof is 3.5 mol % or more and 4.5 mol % or less; and in a range of 10 nm or more and 200 nm or less in a pore distribution, a peak top diameter of a pore volume distribution is 20 nm or more and 120 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 30 nm or more and 170 nm or less.

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The first segregations each include at least Ba, P, and O. A molar ratio (Ba/Ti) of Ba to Ti in the first segregations is 1.20 or more.

A dielectric composition includes dielectric particles and first segregations. The dielectric particles each include a perovskite compound represented by ABO.sub.3 as a main component. The first segregations each include at least Ba, V, and O. A molar ratio (Ba/Ti) of Ba to Ti detected in the first segregations is 1.20 or more.