A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

Provided is a piezoelectric ceramic composition including a potassium sodium niobate-based perovskite type complex oxide represented by Compositional Formula ABO.sub.3, as a main component. Further, the piezoelectric ceramic composition contains Bi in an A site and Zr in a B site. Further, the piezoelectric ceramic composition includes a segregation portion positioned in a crystal grain. At least one of Zr or Bi is localized in the segregation portion.

An oxide ion conductor has a X.sub.3Z.sub.2(TO.sub.4).sub.3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X.sub.1-xA.sub.x).sub.3(Z.sub.1-yB.sub.y).sub.2(T.sub.1-zC.sub.z).sub.3O.sub.12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

A ferrite sintered magnet including ferrite grains having a hexagonal crystal structure. The ferrite grains satisfy 0.56≤W≤0.68 where W is an average value of circularities of the ferrite grains in a cross section parallel to an axis of easy magnetization.

A dielectric composition includes a BaTiO.sub.3-based component as a main component, a donor component including a first element and a second element each having a shorter ionic radius and greater atomic weight than Ba, and an acceptor component including at least one of Mg, Al, Mn and V. An ionic radius of the second element is greater than an ionic radius of the first element, a molar content of the second element is less than a molar content of the first element, and a molar content of the acceptor component is greater than a molar content of the donor component.

Provided herein is an electrically conductive, chemically insulated network of nanofibers that includes first carbon nanofibers electrically connected to second carbon nanofibers to form an electrically conductive network, and second carbon nanofibers electrically connected to other second carbon nanofibers, wherein at least one of the second carbon nanofibers is in direct surface contact with another of the second carbon nanofibers; and an active material that provides electrochemical insulation on surfaces of the first carbon nanofibers and partial surfaces of at least a portion of the second carbon nanofibers, wherein the active material comprises at least 50% by weight of the electrically conductive, chemically insulated network, and wherein the active material provides electrochemical insulation to the entirety of the electrically conductive, chemically insulated network of nanofibers including the area between the first carbon nanofibers and the second carbon nanofibers.

The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.

The invention relates to a blank of a ceramic material, wherein a first ceramic material and then a second ceramic material of different compositions are filled into a die and wherein the materials are pressed and after pressing are sintered. A layer of the first ceramic material is thereby filled into the die and a first cavity formed in the layer, the second ceramic material is then filled into the first open cavity and the materials pressed together and then heat-treated.

The present disclosure relates to a method for the preparation of a precursor solution for a ceramic of the BZT-aBXT type wherein X is selected from Ca, Sn, Mn and Nb and a is a molar fraction selected in the range between 0.10 and 0.90 comprising the steps of: a) dissolving at least one barium precursor compound and at least one precursor compound selected from the group consisting of a calcium precursor compound, a tin precursor compound, a manganese precursor compound and a niobium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms and, after dissolution, dehydrating by stripping, to obtain a first solution; b) dissolving at least one zirconium precursor compound and at least one titanium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms in the presence of an anhydrous chelating agent to obtain a second solution; c) joining said first and second solutions in an anhydrous environment and dehydrating by stripping to obtain said precursor solution. It also relates to a precursor solution, to a method for the preparation of a film of a piezoelectric material, to a piezoelectric material and to an electronic device comprising this piezoelectric material.