C04B2235/3284

Dielectric ceramic composition and multilayer ceramic capacitor comprising same

A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided, the dielectric ceramic composition includes a BaTiO.sub.3-based base material main component and a subcomponent, wherein the subcomponent includes zinc oxide (ZnO) as a first subcomponent, and the content of the ZnO is 0.1 mol % or more and less than 0.4 mol % with respect to 100 mol % of the base material main component.

CERAMIC HONEYCOMB BODIES HAVING HIGH-STRENGTH SKIN AND MANUFACTURING METHODS THEREOF

Methods of manufacturing a ceramic honeycomb body having a honeycomb structure with a matrix of intersecting walls, and a skin disposed on an outer peripheral portion of the matrix where the skin has a first average porosity and the interior portion of the matrix has a second average porosity that is greater than the first average porosity. The methods include coating at least the skin with a fluid formulation containing a sintering aid and subsequently firing the honeycomb structure. In certain embodiments, a glass layer is formed in the skin or in regions of the walls directly adjacent to the skin. In certain embodiments, the coating is applied to a green honeycomb structure, and in other embodiments the coating is applied to a ceramic honeycomb structure. Other honeycomb bodies and methods are described.

Mn-Nb-W-Cu-O-BASED SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR
20210358728 · 2021-11-18 · ·

Provided is a Mn—Nb—W—Cu—O-based sputtering target including, in the component composition, Mn, Nb, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of MnNb.sub.2O.sub.3.67. Also provided is a production method for the sputtering target.

MnZn FERRITE MATERIAL WITH WIDE TEMPERATURE RANGE AND LOW CONSUMPTION, AND PREPARATION METHOD THEREOF

The MnZn ferrite material includes principal components and auxiliary components, where the principal components include: 52.5 mol % to 53.8 mol % of Fe.sub.2O.sub.3, 8.8 mol % to 12 mol % of ZnO, and the balance of MnO; the auxiliary components include: 0.35 wt % to 0.5 wt % of Co.sub.2O.sub.3, 0.03 wt % to 0.08 wt % of CaSiO.sub.3, 0.01 wt % to 0.04 wt % of Nb.sub.2O.sub.5, and 0.05 wt % to 0.12 wt % of TiO.sub.2 and RE elemental components; the RE elemental components include one or more from the group consisting of 0 wt % to 0.04 wt % of Gd.sub.2O.sub.3, 0 wt % to 0.02 wt % of HO.sub.2O.sub.3, and 0 wt % to 0.03 wt % of Ce.sub.2O.sub.3; the auxiliary components are all represented by a mass percentage relative to a total mass of the Fe.sub.2O.sub.3, the MnO, and the ZnO.

Dielectric ceramic composition and multilayer ceramic capacitor comprising the same

A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is greater than 0.2 mol and less than or equal to 1.5 mol based on 100 mol of titanium (Ti) of the base material main ingredient.

MODIFIED NI-ZN FERRITES FOR RADIOFREQUENCY APPLICATIONS

Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co.sup.+2 such that the relaxation peak associated with the Co.sup.+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

SINTERED BODY

A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

Method for obtaining a Raman spectrum of an analyte

A surface-enhanced Raman scattering (SERS) substrate and its method of formation is disclosed. The surface-enhanced Raman scattering (SERS) substrate comprises a solid support, a first noble metal nanoparticles is disposed on the solid support, a porous oxide layer comprising transition metal oxide nanoparticles is disposed on the first noble metal nanoparticles and a second noble metal nanoparticles is disposed on the porous oxide layer. The porous oxide layer prevents contact between the first noble metal nanoparticles and the second noble metal nanoparticles and has a mean pore size of 2 to 30 nm.

Zinc oxide varistor ceramics

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

Metal Oxide Film and Semiconductor Device

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.