A method for improving the Bs of an MnZn power ferrite material by moving the valley point includes the following steps: 1) mixing Fe.sub.2O.sub.3, MnO and ZnO, and performing primary sanding; 2) adding glue, performing spraying and granulating, and then performing pre-sintering to obtain a pre-sintered material; 3) adding additives to the pre-sintered material, and performing secondary sanding; and 4) adding glue to the secondary sanded material, performing spraying and granulating, pressing into a standard ring, and then performing sintering. The method controls and moves the valley point, reduces loss and improves the Bs of a material by controlling the Fe.sub.2O.sub.3 content and the Co.sub.2O.sub.3 content, and the method is relatively simple and suitable for industrialization.

An extrudable ceramic precursor mixture and method of use includes: an inorganic ceramic-forming component, a first siloxane prepolymer, a second siloxane prepolymer with a different composition than the first siloxane prepolymer, a catalyst adapted to catalyze polymerization of the first siloxane prepolymer with the second siloxane prepolymer into a siloxane-based polymer, and a thermally curable siloxane-based cross-linking agent adapted to crosslink the siloxane-based polymer. Comprised is a polydimethylsiloxane having a vinyl functional group and a polydimethylsiloxane having a silicon hydride functional group.

A dielectric composition includes a main ingredient having a perovskite structure represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca and B is at least one of Ti, Zr, and Hf, and a first accessory ingredient. The first accessory ingredient comprises 0.1 mole or more of a rare earth element, 0.02 mole or more of Nb, and 0.25 mole or more and 0.9 mole or less of Mg, a sum of contents of the rare earth element and Nb is 1.5 mole or less.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 μm per cross-sectional area of 76 μm.sup.2 is N, N is 7 or less.

A phosphor plate including: a complex containing an α-sialon phosphor and a sintered body containing spinel represented by a general formula M.sub.2xAl.sub.4-4xO.sub.6-4x (where M represents at least one of Mg, Mn, and Zn, and 0.2<x<0.6). In addition, there is provided a light emitting device including: a group III nitride semiconductor light emitting element; and the phosphor plate provided on one surface of the group III nitride semiconductor light emitting element. Further, there is provided a method for manufacturing the phosphor plate.

A multilayer coil component includes a multilayer body in which a plurality of insulating layers are stacked in a stacking direction and a coil inside, and outer electrodes on surfaces of the multilayer body and electrically connected to the coil. The insulating layers have a magnetic phase having spinel structure containing at least Fe, Ni, Zn, and Cu and a non-magnetic phase containing at least Si. When grain sizes D50 and D90 of crystal grains constituting the magnetic phase are respectively defined as equivalent-area circle diameters of 50% and 90% on a cumulative sum basis in a cumulative distribution of equivalent-area circle diameters of the crystal grains, the grain size D50 is from 50 nm to 750 nm, and the grain size D90 is from 200 nm to 1500 nm.

Provided is a dielectric ceramic composition including a first component and a second component, wherein the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %, and the second component includes at least (a) an oxide of Mn of 0.005% by mass to 3.500% by mass and (b) an oxide of Cu and/or an oxide of Ru.

The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal crystal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries having a maximum length of 0.088 or more and less than 0.49 μm per cross-sectional area of 76 μm.sup.2 is P, P is 8 or more.

A zirconia powder in which when a stabilizer is Y.sub.2O.sub.3, a content thereof is 1.4 mol % or more and less than 2.0 mol %; when the stabilizer is Er.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; when the stabilizer is Yb.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; and when the stabilizer is CaO, a content thereof is 3.5 mol % or more and 4.5 mol % or less; and in a range of 10 nm or more and 200 nm or less in a pore distribution, a peak top diameter of a pore volume distribution is 20 nm or more and 120 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 30 nm or more and 170 nm or less.