An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

An antimicrobial material including a substrate and an antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide in and/or on the substrate is described, as well as antimicrobial coating materials and coatings formed therefrom. The antimicrobial material may be constituted in an antimicrobial surface of a surface-presenting substrate, to combat transmission and spread of microbial disease, e.g., disease mediated by microbial pathogens such as bacteria, viruses, and fungi. Antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide as described may be contacted with microorganisms to effect inactivation thereof.

Porous, binderless ceramic surface modification materials are described, and applications of use thereof. The ceramic surface material is in the form of an interconnected network of porous ceramic material on a substrate. The ceramic material may include a metal oxide, a metal hydroxide, and/or hydrates thereof, or a metal carbonate or metal phosphate, on a substrate surface. The substrate may be in the form of a metal or polymer particulate, powder, extrudate, or flakes.

When manufacturing a magnetic body which is made of a ferrite material containing Fe, Ni, and Zn, and whose Mn content is 0.1288 percent by mass or higher, or a magnetic body which is made of a ferrite material containing Fe, Ni, Zn, and Cu, and whose Mn content is 0.1178 percent by mass or higher, an iron oxide powder whose Mn content is 0.20 percent by mass or higher is used as a raw material powder.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Provided herein is a method of making a conductive network by combining uncoated carbon nanotubes and carbon nanotubes coated with an electroactive substance to create an electrically conductive network; and redistributing at least a portion of the electroactive substance. Also provided herein is an electrically conductive network with an active material coating; first carbon nanotubes coated with the active material coating; and second carbon nanotubes partially coated with the active material coating, wherein at least a portion of the surfaces of the second carbon nanotubes directly contact surfaces of other second carbon nanotubes without the active material coating between these second carbon nanotubes, and wherein the first carbon nanotubes and the second carbon nanotubes are entangled to form an electrically conductive network.

A ceramic contains, in mass percent: Si.sub.3N.sub.4: 20.0 to 60.0%, ZrO.sub.2: 25.0 to 70.0%, and one or more oxides selected from MgO, Y.sub.2O.sub.3, CeO.sub.2, CaO, HfO.sub.2, TiO.sub.2, Al.sub.2O.sub.3, SiO.sub.2, MoO.sub.3, CrO, CoO, ZnO, Ga.sub.2O.sub.3, Ta.sub.2O.sub.5, NiO, and V.sub.2O.sub.5: 5.0 to 15.0%. The ceramic has a coefficient of thermal expansion as high as that of silicon and an excellent mechanical strength, allows fine machining with high precision, and prevents particles from being produced.

When manufacturing a magnetic body whose primary component is Ni—Zn ferrite, an iron oxide powder whose Mn content is 0.20 to 0.85 percent by mass is used as a raw material powder, or, in addition to using an iron oxide powder whose Mn content is 0.20 percent by mass or higher as a raw material powder, a mol ratio of Ni to Zn (Ni/Zn) in the ferrite material is determined based on the Mn content in the iron oxide powder and the raw material powders are compounded in such a way that the mol ratio is achieved. The magnetic body does not contain any additives as essential components other than the primary components of the Ni—Zn ferrite material. A coil component using the magnetic body has excellent direct-current superimposition property and magnetic permeability.

A composition and a solid material is especially suitable for the manufacture of an antenna adapted to operate in the very high frequency and ultra high frequency or V/UHF band. The composition has the formula Ni.sub.aZn.sub.bCu.sub.cCo.sub.dFe.sub.2-δO.sub.4, in which 2(a+b+c+d)+3(2−δ)=8, 0.05<b<0.5, e.g. 0.1<b<0.5, e.g. 0.1<b<0.4, e.g. 0.15<b<0.35, 0.10<c<0.25, preferably 0.15<c<0.25, alternatively c is 0.20, 0.04<d<0.25, preferably 0.06<d<0.25, and more preferably 0.07<d<0.25, and δ<0.05.