C04B2235/3284

HIGH EMISSIVITY FAR INFRARED CERAMIC MODULE FOR THERAPEUTIC DEVICE
20230080964 · 2023-03-16 ·

This invention relates to a ceramic module for assembly into a therapeutic device for treating a human or animal body with irradiation of far infrared. More specifically, said ceramic module can simultaneously emit blackbody-like thermal radiation and stimulated FIR-photons radiation in 3-16 μm wavelength spectrum, while the overall radiation in 8-14 μm wavelength range is measured to be an approximated blackbody radiation at a temperature that is at least 1 °K. (or 1 °C.) higher than the actual body temperature of said ceramic module, signifying an effective emissivity greater than 1.0. Said ceramic module may be used alone or serve as components of a therapeutic device for increasing physiologic performance, immune competence, health, and mean lifespan of human or animal.

Surface-enhanced Raman scattering (SERS) substrate

A surface-enhanced Raman scattering (SERS) substrate and its method of formation is disclosed. The surface-enhanced Raman scattering (SERS) substrate comprises a solid support, a first noble metal nanoparticles is disposed on the solid support, a porous oxide layer comprising transition metal oxide nanoparticles is disposed on the first noble metal nanoparticles and a second noble metal nanoparticles is disposed on the porous oxide layer. The porous oxide layer prevents contact between the first noble metal nanoparticles and the second noble metal nanoparticles and has a mean pore size of 2 to 30 nm.

Preform for making a component of a braking system
11473637 · 2022-10-18 · ·

A preform for making a component of a braking system having a fibre-reinforced ceramic composite material, obtained by forming and subsequent pyrolysis of a pre-preg is described. Also described is a component of a braking system made wholly or in part from the preform, and a method for making a preform in a fibre-reinforced ceramic composite material.

Oxide ion conductor and electrochemical device

An oxide ion conductor has a X.sub.3Z.sub.2(TO.sub.4).sub.3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X.sub.1-xA.sub.x).sub.3(Z.sub.1-yB.sub.y).sub.2(T.sub.1-zC.sub.z).sub.3O.sub.12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.

Ruthenium doped Z-type hexaferrite
11476021 · 2022-10-18 · ·

In an aspect, a ferrite composition comprises a Ru—Co.sub.2Z ferrite having the formula: (Ba.sub.3-xM.sub.x)Co.sub.2(M′Ru).sub.yFe.sub.24-2y-zO.sub.41, wherein M is at least one of Sr, Pb, or Ca; M′ is at least one of Co, Zn, Mg, or Cu; x is 1 to 3; y is greater than 0 to 2; and z is −4 to 4. In another aspect, an article comprises the ferrite composition. In yet another aspect, method of making the ferrite composition comprises mixing ferrite precursor compounds comprising Fe, Ba, Co, and Ru; and sintering the ferrite precursor compounds in an oxygen atmosphere to form the Ru—Co.sub.2Z ferrite.

AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

TEMPERATURE INSENSITIVE DIELECTRIC CONSTANT GARNETS
20220324722 · 2022-10-13 ·

Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

ANTI-CORROSION AND ANTI-COKING CERAMIC COATING WITH EASY STATE IDENTIFICATION FOR COAL-FIRED BOILER AND PREPARATION METHOD THEREOF
20230060480 · 2023-03-02 ·

Disclosed are an anti-corrosion and anti-coking ceramic coating with easy state identification for a coal-fired boiler and a preparation method thereof. The ceramic coating is formed by compounding a bottom coating layer and a surface coating layer, wherein the bottom coating layer is prepared from raw materials comprising sodium silicate, lanthanum oxide, niobium pentoxide, aluminum oxide, bismuth oxide, boron oxide, zinc oxide, silicon oxide, titanium dioxide, nano whisker, titanium nitride, and graphite fluoride, and the surface coating layer is prepared from raw materials comprising sodium silicate, lanthanum oxide, niobium pentoxide, chromium oxide, aluminum oxide, bismuth oxide, boron oxide, zinc oxide, silicon oxide, graphite fluoride, titanium nitride, silicon carbide, nano whisker, and cobalt green. An operating state of the ceramic coating is rapidly identified by a color difference between the bottom coating layer and the surface coating layer, which is beneficial to efficient maintenance of the ceramic coating during inspection.

Thermoelectric material, thermoelectric device, powder for thermoelectric material, and method for producing thermoelectric material

A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m.Math.K) at 200 to 400° C.

Li3Mg2SbO6-based microwave dielectric ceramic material easy to sinter and with high q value, and preparation method therefor

A Li.sub.3Mg.sub.2SbO.sub.6-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling Sb.sub.2O.sub.3 and Li.sub.2CO.sub.3 according to a chemical ratio and then drying, and conducting pre-sintering to obtain a Li.sub.3SbO.sub.4 phase; and 2) mixing and ball-milling MgO, ZnO and Li.sub.3SbO.sub.4 powder according a chemical ratio of Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6 and then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.